TY - JOUR
T1 - The effect of high concentration of phosphorus in aluminum-induced crystallization of amorphous silicon films
AU - Hwang, Jun Dar
AU - Luo, Lee Chi
AU - Brahma, Sanjaya
AU - Lo, Kuang Yao
N1 - Funding Information:
This work was supported by the Ministry of Science and Technology, Taiwan , under Contract Nos. MOST102-2112-M-415-004-MY3 and MOST102-2112-M-006-010-MY3 . We also thank the National Nano Device Laboratories, Tainan, Taiwan, for permitting us to use their equipment.
Publisher Copyright:
© 2016 Elsevier B.V.
PY - 2016/11/1
Y1 - 2016/11/1
N2 - Polycrystalline silicon (poly-Si) film prepared by aluminum-induced crystallization (AIC) of highly phosphorus (P)-doped amorphous silicon has been proposed for suppressing Si islands and voids. Si islands on the poly-Si surface and voids at the interface between the poly-Si and the glass are caused by Si atoms’ out-diffusion toward the top surface during the AIC process, which also degrades the electrical characteristics of the film. High-P dopants can form P precipitations and retard the out-diffusion of Si atoms, hence suppressing Si islands and voids. Also, P precipitations can enhance the crystallization rate and grain growth. P dopants act as donors and compensate for the p-type poly-Si film, which is formed by Al doping during the AIC process. The hole concentration of undoped poly-Si is reduced by approximately three orders to 7 × 1012 cm− 3. Such near-neutral poly-Si films could be applied as intrinsic (i) layers in p-i-n structures to explore solar cell applications. Also, the enhanced quality of P-doped AIC-Si increases the mobility by five times owing to reduced scattering and trap density.
AB - Polycrystalline silicon (poly-Si) film prepared by aluminum-induced crystallization (AIC) of highly phosphorus (P)-doped amorphous silicon has been proposed for suppressing Si islands and voids. Si islands on the poly-Si surface and voids at the interface between the poly-Si and the glass are caused by Si atoms’ out-diffusion toward the top surface during the AIC process, which also degrades the electrical characteristics of the film. High-P dopants can form P precipitations and retard the out-diffusion of Si atoms, hence suppressing Si islands and voids. Also, P precipitations can enhance the crystallization rate and grain growth. P dopants act as donors and compensate for the p-type poly-Si film, which is formed by Al doping during the AIC process. The hole concentration of undoped poly-Si is reduced by approximately three orders to 7 × 1012 cm− 3. Such near-neutral poly-Si films could be applied as intrinsic (i) layers in p-i-n structures to explore solar cell applications. Also, the enhanced quality of P-doped AIC-Si increases the mobility by five times owing to reduced scattering and trap density.
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U2 - 10.1016/j.tsf.2016.05.050
DO - 10.1016/j.tsf.2016.05.050
M3 - Article
AN - SCOPUS:84995877346
SN - 0040-6090
VL - 618
SP - 50
EP - 54
JO - Thin Solid Films
JF - Thin Solid Films
ER -