The effect of interface shape on dislocation generation during crystal growth

Ke Ming Chen; Jin Yuan Hsieh; Chi-Chuan Hwang

doi:10.1016/0735-1933(92)90084-U

The effect of interface shape on dislocation generation during crystal growth

Ke Ming Chen, Jin Yuan Hsieh, Chi-Chuan Hwang

Department of Engineering Science

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We adopt the quasi-steady-state thermoelastic analysis with the effect of interface shape to predict the dislocation density pattern in Czochralski-pulled single crystal. The results show that the dislocation density deduced from the analysis with effect of curved interface is quite different from that with effect of the planar interface. Quantitatively, this difference of the dislocation density on sections near the interface between the two cases (planar and curved interfaces) may exceed more than 20%, under normal operation condition.

Original language	English
Pages (from-to)	385-394
Number of pages	10
Journal	International Communications in Heat and Mass Transfer
Volume	19
Issue number	3
DOIs	https://doi.org/10.1016/0735-1933(92)90084-U
Publication status	Published - 1992 Jan 1

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
General Chemical Engineering
Condensed Matter Physics

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10.1016/0735-1933(92)90084-U

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@article{43708994f26f4b6db3298d7b8ba1a54f,

title = "The effect of interface shape on dislocation generation during crystal growth",

abstract = "We adopt the quasi-steady-state thermoelastic analysis with the effect of interface shape to predict the dislocation density pattern in Czochralski-pulled single crystal. The results show that the dislocation density deduced from the analysis with effect of curved interface is quite different from that with effect of the planar interface. Quantitatively, this difference of the dislocation density on sections near the interface between the two cases (planar and curved interfaces) may exceed more than 20%, under normal operation condition.",

author = "Chen, {Ke Ming} and Hsieh, {Jin Yuan} and Chi-Chuan Hwang",

year = "1992",

month = jan,

day = "1",

doi = "10.1016/0735-1933(92)90084-U",

language = "English",

volume = "19",

pages = "385--394",

journal = "International Communications in Heat and Mass Transfer",

issn = "0735-1933",

publisher = "Elsevier Limited",

number = "3",

}

TY - JOUR

T1 - The effect of interface shape on dislocation generation during crystal growth

AU - Chen, Ke Ming

AU - Hsieh, Jin Yuan

AU - Hwang, Chi-Chuan

PY - 1992/1/1

Y1 - 1992/1/1

N2 - We adopt the quasi-steady-state thermoelastic analysis with the effect of interface shape to predict the dislocation density pattern in Czochralski-pulled single crystal. The results show that the dislocation density deduced from the analysis with effect of curved interface is quite different from that with effect of the planar interface. Quantitatively, this difference of the dislocation density on sections near the interface between the two cases (planar and curved interfaces) may exceed more than 20%, under normal operation condition.

AB - We adopt the quasi-steady-state thermoelastic analysis with the effect of interface shape to predict the dislocation density pattern in Czochralski-pulled single crystal. The results show that the dislocation density deduced from the analysis with effect of curved interface is quite different from that with effect of the planar interface. Quantitatively, this difference of the dislocation density on sections near the interface between the two cases (planar and curved interfaces) may exceed more than 20%, under normal operation condition.

UR - http://www.scopus.com/inward/record.url?scp=0026860597&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026860597&partnerID=8YFLogxK

U2 - 10.1016/0735-1933(92)90084-U

DO - 10.1016/0735-1933(92)90084-U

M3 - Article

AN - SCOPUS:0026860597

SN - 0735-1933

VL - 19

SP - 385

EP - 394

JO - International Communications in Heat and Mass Transfer

JF - International Communications in Heat and Mass Transfer

IS - 3

ER -

The effect of interface shape on dislocation generation during crystal growth

Abstract

All Science Journal Classification (ASJC) codes

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