The effect of nanoscale protrusions on field-emission properties for GaN nanowires

Kuo Hao Lee, Cheng Da Shin, In Gann Chen, Bean Jon Li

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

GaN nanowires (NWs) have been synthesized on platinum-coated silicon(111) substrates by the chemical vapor deposition (CVD) method under different NH3 H2 carrier gas-flow rate ratios. X-ray diffractometer and transmission electron microscope analyses indicate that GaN NWs have wurtzite structures. Nanoscale protrusions with crystal orientation along the [002] direction were observed on the surface of GaN NWs grown under high H2 flow rate conditions. As compared to the field-emission result of GaN NWs with smooth surfaces, GaN NWs with nanoscale protrusions exhibit a lower turn-on field of 8.5 Vμm and a higher field-enhancement factor of Β=315. These nanoscale protrusions are believed to account for the enhancement of the field-emission behaviors of GaN NWs.

Original languageEnglish
Pages (from-to)K87-K91
JournalJournal of the Electrochemical Society
Volume154
Issue number10
DOIs
Publication statusPublished - 2007

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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