The effect of oxygen content on bonding configuration and properties of low-k organosilicate glass dielectric film

Sheng Wen Chen, Chuan Pu Liu, Shiu Ko JangJian, Ying Lang Wang

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Low-k organosilicate glass (SiOC:H) film as inter-metal dielectric (IMD) layer in advanced ultra-large-scale integrated circuits (ULSI) was deposited by plasma-enhanced chemical vapor deposition (PECVD) with trimethylsilane (TMS) and oxygen. The effects of oxygen on the bonding configuration, optical and electrical properties were investigated by adjusting TMS/O2 gas ratios. The absorbance spectra of Fourier transform infrared (FT-IR) spectroscopy shows that the frequency of the Si-O stretching vibration mode shifted to a lower wave number (red shift) with an increase in the ratio of TMS/O2. The related elements contented in SiOC:H films calculated from FT-IR spectra coincided with the analysis of Rutherford backscattering spectroscopy. Results of optical and electrical properties indicated that a lower refractive index (RI), a higher strength of breakdown voltage, a lower dielectric constant, and a lower leakage current density were achieved at lower TMS/O2 gas ratios.

Original languageEnglish
Pages (from-to)513-517
Number of pages5
JournalJournal of Physics and Chemistry of Solids
Volume69
Issue number2-3
DOIs
Publication statusPublished - 2008 Feb 1

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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