The effect of oxygen partial pressure and annealing process on the characteristics of ZnGa2O4 MSM UV photodetector

Wei Lun Huang, Cheng Hsun Li, Sheng Po Chang, Shoou Jinn Chang

Research output: Contribution to journalArticle

Abstract

In this work, ZnGa2O4 solar-blind photodetectors (PD) based on a metal-semiconductor-metal (MSM) structure was fabricated by radio frequency (RF) magnetron sputtering method. The transmittance of the material shows larger than 80% cross the visible light region. As a wide bandgap and high transparency semiconducting material, ZGO is a potential candidate for UV-detection applications. The ZGO MSM PD with no oxygen flow during sputtering exhibits a responsivity of 4.46 × 10−2 A/W under illumination at wavelength of 260 nm, rejection ratio of 1.75 × 104. The performance can be enhanced with proper thermal annealing process. With an annealing process at temperature of 200°C, the responsivity and rejection ratio are 0.203 A/W and 1.12 × 105, respectively.

Original languageEnglish
Pages (from-to)Q3213-Q3216
JournalECS Journal of Solid State Science and Technology
Volume8
Issue number7
DOIs
Publication statusPublished - 2019 Jan 1

Fingerprint

Photodetectors
Partial pressure
Metals
Annealing
Semiconductor materials
Oxygen
Magnetron sputtering
Transparency
Sputtering
Energy gap
Lighting
Wavelength
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

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title = "The effect of oxygen partial pressure and annealing process on the characteristics of ZnGa2O4 MSM UV photodetector",
abstract = "In this work, ZnGa2O4 solar-blind photodetectors (PD) based on a metal-semiconductor-metal (MSM) structure was fabricated by radio frequency (RF) magnetron sputtering method. The transmittance of the material shows larger than 80{\%} cross the visible light region. As a wide bandgap and high transparency semiconducting material, ZGO is a potential candidate for UV-detection applications. The ZGO MSM PD with no oxygen flow during sputtering exhibits a responsivity of 4.46 × 10−2 A/W under illumination at wavelength of 260 nm, rejection ratio of 1.75 × 104. The performance can be enhanced with proper thermal annealing process. With an annealing process at temperature of 200°C, the responsivity and rejection ratio are 0.203 A/W and 1.12 × 105, respectively.",
author = "Huang, {Wei Lun} and Li, {Cheng Hsun} and Chang, {Sheng Po} and Chang, {Shoou Jinn}",
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The effect of oxygen partial pressure and annealing process on the characteristics of ZnGa2O4 MSM UV photodetector. / Huang, Wei Lun; Li, Cheng Hsun; Chang, Sheng Po; Chang, Shoou Jinn.

In: ECS Journal of Solid State Science and Technology, Vol. 8, No. 7, 01.01.2019, p. Q3213-Q3216.

Research output: Contribution to journalArticle

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AU - Li, Cheng Hsun

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