@inproceedings{2765a7e2eb364b91a4ccb1387600ef47,
title = "The effect of post-oxide annealing on H2O2-grown Al2O3, AlGaN/GaN polarization charges and MOS-HEMT performances",
abstract = "This work investigates the effect of post oxide annealing (POA) on the AlGaN/GaN MOS-HEMT with a gate oxide grown by the H2O2 oxidation technique. The experimental results suggest that the gate dielectric layer with the POA treatment improves the dielectric material quality and MOS-HEMT performances. The dielectric breakdown field (EBD) of Al2O3 is improved from 6.5 to 7.9 MV/cm. In addition, the hysteresis measurement suggests that the fixed charges in Al2O3 and the interface charges (Dit) at Al2O3/AlGaN interface are reduced. This work also finds that the POA affects polarization charge density and improves MOS-HEMT performances.",
author = "Liu, {Han Yin} and Hsu, {Wei Chou} and Lee, {Ching Sung} and Chou, {Bo Yi} and Ou, {Wen Chia} and Wang, {Yi Hsuan} and Chen, {Wei Fan}",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014 ; Conference date: 26-04-2014 Through 28-04-2014",
year = "2014",
month = nov,
day = "5",
doi = "10.1109/InfoSEEE.2014.6948183",
language = "English",
series = "Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "592--595",
editor = "Xiaohong Jiang and Shaozi Li and Ying Dai and Yun Cheng",
booktitle = "Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014",
address = "United States",
}