The effect of post-oxide annealing on H2O2-grown Al2O3, AlGaN/GaN polarization charges and MOS-HEMT performances

Han Yin Liu, Wei-Chou Hsu, Ching Sung Lee, Bo Yi Chou, Wen Chia Ou, Yi Hsuan Wang, Wei Fan Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This work investigates the effect of post oxide annealing (POA) on the AlGaN/GaN MOS-HEMT with a gate oxide grown by the H2O2 oxidation technique. The experimental results suggest that the gate dielectric layer with the POA treatment improves the dielectric material quality and MOS-HEMT performances. The dielectric breakdown field (EBD) of Al2O3 is improved from 6.5 to 7.9 MV/cm. In addition, the hysteresis measurement suggests that the fixed charges in Al2O3 and the interface charges (Dit) at Al2O3/AlGaN interface are reduced. This work also finds that the POA affects polarization charge density and improves MOS-HEMT performances.

Original languageEnglish
Title of host publicationProceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages592-595
Number of pages4
Volume1
ISBN (Electronic)9781479931965
DOIs
Publication statusPublished - 2014 Nov 5
Event2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014 - Sapporo City, Hokkaido, Japan
Duration: 2014 Apr 262014 Apr 28

Other

Other2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014
CountryJapan
CitySapporo City, Hokkaido
Period14-04-2614-04-28

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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