The effect of RF power and deposition temperature on the structure and electrical properties of Mg4Ta2O9 thin films prepared by RF magnetron sputtering

Cheng-Liang Huang, Jhih Yong Chen

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Mg4Ta2O9 thin films were deposited on p-type Si(1 0 0) substrates by reactive RF magnetron sputtering with various RF powers and deposition temperatures. The crystallinity and electrical properties of the films were investigated. The microstructure and surface morphology characteristics analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) were related to deposition parameters, such as RF power (100, 200, and 300 W) and deposition temperature (250, 350, and 450 °C). Highly oriented Mg4Ta2O9 (1 0 4) and (1 1 6) perpendicular to the substrate surface were identified at an RF power of 300 W and a deposition temperature of 450 °C. The electrical properties were also measured using capacitance-voltage (C-V) and current-voltage (I-V) measurements on a metal-insulator-semiconductor (MIS) capacitor structure. The leakage current increased with increasing RF power and substrate temperature. At an RF power of 300 W, a substrate temperature of 450 °C, a deposition pressure of 5 mTorr, and an Ar/O2 ratio of 100/0, the Mg4Ta2O9 films with 4.82 μm thickness possess a dielectric constant of 13.2 (f=10 MHz) and a leakage current density of 1.59×10-9 A/mm2 at 5 V.

Original languageEnglish
Pages (from-to)627-633
Number of pages7
JournalJournal of Crystal Growth
Volume311
Issue number3
DOIs
Publication statusPublished - 2009 Jan 15

Fingerprint

Magnetron sputtering
magnetron sputtering
Electric properties
electrical properties
Thin films
thin films
Substrates
Leakage currents
leakage
Temperature
temperature
Electric potential
electric potential
MIS (semiconductors)
Surface morphology
Atomic force microscopy
crystallinity
capacitors
Capacitors
Permittivity

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

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abstract = "Mg4Ta2O9 thin films were deposited on p-type Si(1 0 0) substrates by reactive RF magnetron sputtering with various RF powers and deposition temperatures. The crystallinity and electrical properties of the films were investigated. The microstructure and surface morphology characteristics analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) were related to deposition parameters, such as RF power (100, 200, and 300 W) and deposition temperature (250, 350, and 450 °C). Highly oriented Mg4Ta2O9 (1 0 4) and (1 1 6) perpendicular to the substrate surface were identified at an RF power of 300 W and a deposition temperature of 450 °C. The electrical properties were also measured using capacitance-voltage (C-V) and current-voltage (I-V) measurements on a metal-insulator-semiconductor (MIS) capacitor structure. The leakage current increased with increasing RF power and substrate temperature. At an RF power of 300 W, a substrate temperature of 450 °C, a deposition pressure of 5 mTorr, and an Ar/O2 ratio of 100/0, the Mg4Ta2O9 films with 4.82 μm thickness possess a dielectric constant of 13.2 (f=10 MHz) and a leakage current density of 1.59×10-9 A/mm2 at 5 V.",
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AB - Mg4Ta2O9 thin films were deposited on p-type Si(1 0 0) substrates by reactive RF magnetron sputtering with various RF powers and deposition temperatures. The crystallinity and electrical properties of the films were investigated. The microstructure and surface morphology characteristics analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) were related to deposition parameters, such as RF power (100, 200, and 300 W) and deposition temperature (250, 350, and 450 °C). Highly oriented Mg4Ta2O9 (1 0 4) and (1 1 6) perpendicular to the substrate surface were identified at an RF power of 300 W and a deposition temperature of 450 °C. The electrical properties were also measured using capacitance-voltage (C-V) and current-voltage (I-V) measurements on a metal-insulator-semiconductor (MIS) capacitor structure. The leakage current increased with increasing RF power and substrate temperature. At an RF power of 300 W, a substrate temperature of 450 °C, a deposition pressure of 5 mTorr, and an Ar/O2 ratio of 100/0, the Mg4Ta2O9 films with 4.82 μm thickness possess a dielectric constant of 13.2 (f=10 MHz) and a leakage current density of 1.59×10-9 A/mm2 at 5 V.

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