The effect of Si/Ir codeposition ratio on the Ir silicide/Si(100) interface roughness

Chen-Kuei Chung, J. Hwang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Epitaxial Ir suicide films were grown on p-Si(100) substrates at 450 °C by codeposition of Ir and Si with different Si/Ir atomic ratios. Epitaxial Ir3Si4 was grown on Si(100) as pure Ir was deposited at a substrate temperature of 450 °C. The Ir3Si4/Si(100) interface remained smooth although intermixing occurred during deposition of Ir on Si(100). Ir3Si4 was the phase formed on Si(100) even with higher codeposition ratios, but the Ir3Si4/Si(100) interface became rougher at higher codeposition ratios. The interface roughness occurring with higher Si/Ir codeposition ratios was attributed to the spatial inhomogeneity of the Si/Ir ratio on a Si(100) surface during the codeposition. The different degrees of intermixing due to the inhomogeneous surface would make the Ir3Si4/Si(100) interface rough. To obtain a sharp interface, deposition of pure Ir on Si(100) at high temperature is suggested.

Original languageEnglish
Pages (from-to)191-194
Number of pages4
JournalMaterials Chemistry and Physics
Volume43
Issue number2
DOIs
Publication statusPublished - 1996 Jan 1

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roughness
Surface roughness
Substrates
Temperature
inhomogeneity
temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

@article{ff523cf7827343c5ba77ebe99735ba85,
title = "The effect of Si/Ir codeposition ratio on the Ir silicide/Si(100) interface roughness",
abstract = "Epitaxial Ir suicide films were grown on p-Si(100) substrates at 450 °C by codeposition of Ir and Si with different Si/Ir atomic ratios. Epitaxial Ir3Si4 was grown on Si(100) as pure Ir was deposited at a substrate temperature of 450 °C. The Ir3Si4/Si(100) interface remained smooth although intermixing occurred during deposition of Ir on Si(100). Ir3Si4 was the phase formed on Si(100) even with higher codeposition ratios, but the Ir3Si4/Si(100) interface became rougher at higher codeposition ratios. The interface roughness occurring with higher Si/Ir codeposition ratios was attributed to the spatial inhomogeneity of the Si/Ir ratio on a Si(100) surface during the codeposition. The different degrees of intermixing due to the inhomogeneous surface would make the Ir3Si4/Si(100) interface rough. To obtain a sharp interface, deposition of pure Ir on Si(100) at high temperature is suggested.",
author = "Chen-Kuei Chung and J. Hwang",
year = "1996",
month = "1",
day = "1",
doi = "10.1016/0254-0584(95)01621-Z",
language = "English",
volume = "43",
pages = "191--194",
journal = "Materials Chemistry and Physics",
issn = "0254-0584",
publisher = "Elsevier BV",
number = "2",

}

The effect of Si/Ir codeposition ratio on the Ir silicide/Si(100) interface roughness. / Chung, Chen-Kuei; Hwang, J.

In: Materials Chemistry and Physics, Vol. 43, No. 2, 01.01.1996, p. 191-194.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The effect of Si/Ir codeposition ratio on the Ir silicide/Si(100) interface roughness

AU - Chung, Chen-Kuei

AU - Hwang, J.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - Epitaxial Ir suicide films were grown on p-Si(100) substrates at 450 °C by codeposition of Ir and Si with different Si/Ir atomic ratios. Epitaxial Ir3Si4 was grown on Si(100) as pure Ir was deposited at a substrate temperature of 450 °C. The Ir3Si4/Si(100) interface remained smooth although intermixing occurred during deposition of Ir on Si(100). Ir3Si4 was the phase formed on Si(100) even with higher codeposition ratios, but the Ir3Si4/Si(100) interface became rougher at higher codeposition ratios. The interface roughness occurring with higher Si/Ir codeposition ratios was attributed to the spatial inhomogeneity of the Si/Ir ratio on a Si(100) surface during the codeposition. The different degrees of intermixing due to the inhomogeneous surface would make the Ir3Si4/Si(100) interface rough. To obtain a sharp interface, deposition of pure Ir on Si(100) at high temperature is suggested.

AB - Epitaxial Ir suicide films were grown on p-Si(100) substrates at 450 °C by codeposition of Ir and Si with different Si/Ir atomic ratios. Epitaxial Ir3Si4 was grown on Si(100) as pure Ir was deposited at a substrate temperature of 450 °C. The Ir3Si4/Si(100) interface remained smooth although intermixing occurred during deposition of Ir on Si(100). Ir3Si4 was the phase formed on Si(100) even with higher codeposition ratios, but the Ir3Si4/Si(100) interface became rougher at higher codeposition ratios. The interface roughness occurring with higher Si/Ir codeposition ratios was attributed to the spatial inhomogeneity of the Si/Ir ratio on a Si(100) surface during the codeposition. The different degrees of intermixing due to the inhomogeneous surface would make the Ir3Si4/Si(100) interface rough. To obtain a sharp interface, deposition of pure Ir on Si(100) at high temperature is suggested.

UR - http://www.scopus.com/inward/record.url?scp=0030084825&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030084825&partnerID=8YFLogxK

U2 - 10.1016/0254-0584(95)01621-Z

DO - 10.1016/0254-0584(95)01621-Z

M3 - Article

VL - 43

SP - 191

EP - 194

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

SN - 0254-0584

IS - 2

ER -