The effect of sulfur treatment on the temperature-dependent performance of InGaP/GaAs HBTs

Shiou Ying Cheng; Ssu I. Fu; Tzu Pin Chen; Po Hsien Lai; Rong Chau Liu; Kuei Yi Chu; Li Yang Chen; Wen Chau Liu

doi:10.1109/TDMR.2006.883154

The effect of sulfur treatment on the temperature-dependent performance of InGaP/GaAs HBTs

Shiou Ying Cheng, Ssu I. Fu, Tzu Pin Chen, Po Hsien Lai, Rong Chau Liu, Kuei Yi Chu, Li Yang Chen, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Temperature-dependent de characteristics and RF performances of InGaP/GaAs heterojunction bipolar transistors with sulfur treatment are systematically studied. The base-surface-recombination current, specific contact resistance, and sheet resistance of the studied devices can be effectively reduced by sulfur treatment. Practically, long-time sulfur treatment is not appropriate. In this paper, the studied device with the sulfur treatment for 12-15 min is a good choice. Experimentally, the collector-emitter offset voltage ΔV _CE and dc current gain with sulfur treatment can be substantially reduced and increased, respectively, over the 300-K-400-K temperature range. Moreover, as the temperature is increased, the device with sulfur treatment exhibits temperature-independent or thermally stable performances. The devices with sulfur treatment also exhibit improved RF characteristics.

Original language	English
Pages (from-to)	500-507
Number of pages	8
Journal	IEEE Transactions on Device and Materials Reliability
Volume	6
Issue number	4
DOIs	https://doi.org/10.1109/TDMR.2006.883154
Publication status	Published - 2006 Dec

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Safety, Risk, Reliability and Quality
Electrical and Electronic Engineering

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10.1109/TDMR.2006.883154

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@article{7554f70c629f4c8185d1cf78260f6205,

title = "The effect of sulfur treatment on the temperature-dependent performance of InGaP/GaAs HBTs",

abstract = "Temperature-dependent de characteristics and RF performances of InGaP/GaAs heterojunction bipolar transistors with sulfur treatment are systematically studied. The base-surface-recombination current, specific contact resistance, and sheet resistance of the studied devices can be effectively reduced by sulfur treatment. Practically, long-time sulfur treatment is not appropriate. In this paper, the studied device with the sulfur treatment for 12-15 min is a good choice. Experimentally, the collector-emitter offset voltage ΔV CE and dc current gain with sulfur treatment can be substantially reduced and increased, respectively, over the 300-K-400-K temperature range. Moreover, as the temperature is increased, the device with sulfur treatment exhibits temperature-independent or thermally stable performances. The devices with sulfur treatment also exhibit improved RF characteristics.",

author = "Cheng, {Shiou Ying} and Fu, {Ssu I.} and Chen, {Tzu Pin} and Lai, {Po Hsien} and Liu, {Rong Chau} and Chu, {Kuei Yi} and Chen, {Li Yang} and Liu, {Wen Chau}",

note = "Funding Information: Manuscript received September 1, 2005; revised April 21, 2006. This work was supported in part by the National Science Council of the Republic of China, Taiwan, R.O.C., under Contract NSC 94-2215-E197-002 and 94-2215-E006-060.",

year = "2006",

month = dec,

doi = "10.1109/TDMR.2006.883154",

language = "English",

volume = "6",

pages = "500--507",

journal = "IEEE Transactions on Device and Materials Reliability",

issn = "1530-4388",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

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TY - JOUR

T1 - The effect of sulfur treatment on the temperature-dependent performance of InGaP/GaAs HBTs

AU - Cheng, Shiou Ying

AU - Fu, Ssu I.

AU - Chen, Tzu Pin

AU - Lai, Po Hsien

AU - Liu, Rong Chau

AU - Chu, Kuei Yi

AU - Chen, Li Yang

AU - Liu, Wen Chau

N1 - Funding Information: Manuscript received September 1, 2005; revised April 21, 2006. This work was supported in part by the National Science Council of the Republic of China, Taiwan, R.O.C., under Contract NSC 94-2215-E197-002 and 94-2215-E006-060.

PY - 2006/12

Y1 - 2006/12

N2 - Temperature-dependent de characteristics and RF performances of InGaP/GaAs heterojunction bipolar transistors with sulfur treatment are systematically studied. The base-surface-recombination current, specific contact resistance, and sheet resistance of the studied devices can be effectively reduced by sulfur treatment. Practically, long-time sulfur treatment is not appropriate. In this paper, the studied device with the sulfur treatment for 12-15 min is a good choice. Experimentally, the collector-emitter offset voltage ΔV CE and dc current gain with sulfur treatment can be substantially reduced and increased, respectively, over the 300-K-400-K temperature range. Moreover, as the temperature is increased, the device with sulfur treatment exhibits temperature-independent or thermally stable performances. The devices with sulfur treatment also exhibit improved RF characteristics.

AB - Temperature-dependent de characteristics and RF performances of InGaP/GaAs heterojunction bipolar transistors with sulfur treatment are systematically studied. The base-surface-recombination current, specific contact resistance, and sheet resistance of the studied devices can be effectively reduced by sulfur treatment. Practically, long-time sulfur treatment is not appropriate. In this paper, the studied device with the sulfur treatment for 12-15 min is a good choice. Experimentally, the collector-emitter offset voltage ΔV CE and dc current gain with sulfur treatment can be substantially reduced and increased, respectively, over the 300-K-400-K temperature range. Moreover, as the temperature is increased, the device with sulfur treatment exhibits temperature-independent or thermally stable performances. The devices with sulfur treatment also exhibit improved RF characteristics.

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DO - 10.1109/TDMR.2006.883154

M3 - Article

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EP - 507

JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

IS - 4

ER -

The effect of sulfur treatment on the temperature-dependent performance of InGaP/GaAs HBTs

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