The effect of temperature on the epitaxial quality of bilayers of iridium silicide and SiGe deposited on Si(100) in ultrahigh vacuum

C. K. Chung, J. Hwang, Y. H. Chang, W. J. Chen, L. P. Wang

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6 Citations (Scopus)

Abstract

Ir-silicide/SiGe layers were co-deposited on a p-Si(100) substrate at high temperatures. Reflection high energy electron diffraction, transmission electron microscope, and grazing angle incidence X-ray diffraction have been used in characterizing the co-deposited layers. Heteroepitaxial Ir-silicide/SiGe layers on top of p-Si(100) have been achieved at a substrate temperature of 450°C. The Ir-silicide layer was determined to be Ir3Si4 with four types of epitaxial modes. The three principal axes (a = 18.551 A ̊, b = 3.840 A ̊, and c = 5.713 A ̊) were found to be strained, slightly different from those in the bulk Ir3Si4 (a = 18.870 A ̊, b = 3.679 A ̊, and c = 5.774 A ̊). The Ir-silicide/SiGe layers co-deposited at 550 and 525°C showed dual phases and polycrystalline structures. corresponding to three-dimensional island growth.

Original languageEnglish
Pages (from-to)675-681
Number of pages7
JournalJournal of Crystal Growth
Volume126
Issue number4
DOIs
Publication statusPublished - 1993 Feb 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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