TY - JOUR
T1 - The effect of the long-range order in a quantum dot array on the in-plane lattice thermal conductivity
AU - Khitun, A.
AU - Balandin, A.
AU - Liu, J. L.
AU - Wang, K. L.
N1 - Funding Information:
Acknowledgements—The work in UCLA was supported by the DoD MURI-ONR program on Thermo-electrics (Dr John Pazik). The work in UCR was supported by the UC Energy Institute’s EST program (Dr Severin Borenstein).
PY - 2001/7
Y1 - 2001/7
N2 - Semiconductor quantum dot superlattices consisting of arrays of quantum dots have shown great promise for a variety of device applications, including thermoelectric power generation and cooling. In this paper we theoretically investigate the effect of long-range order in a quantum dot array on its in-plane lattice thermal conductivity. It is demonstrated that the long-range order in a quantum dot array enhances acoustic phonon scattering and, thus leads to a decrease of its lattice thermal conductivity. The decrease in the ordered quantum dot array, which acts as a phonon grating, is stronger than that in the disordered one due to the contribution of the coherent scattering term. The numerical calculations were carried out for a structure that consists of multiple layers of Si with layers of ordered Ge quantum dots separated by wetting layers and spacers.
AB - Semiconductor quantum dot superlattices consisting of arrays of quantum dots have shown great promise for a variety of device applications, including thermoelectric power generation and cooling. In this paper we theoretically investigate the effect of long-range order in a quantum dot array on its in-plane lattice thermal conductivity. It is demonstrated that the long-range order in a quantum dot array enhances acoustic phonon scattering and, thus leads to a decrease of its lattice thermal conductivity. The decrease in the ordered quantum dot array, which acts as a phonon grating, is stronger than that in the disordered one due to the contribution of the coherent scattering term. The numerical calculations were carried out for a structure that consists of multiple layers of Si with layers of ordered Ge quantum dots separated by wetting layers and spacers.
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U2 - 10.1006/spmi.2001.0981
DO - 10.1006/spmi.2001.0981
M3 - Article
AN - SCOPUS:0035386236
VL - 30
SP - 1
EP - 8
JO - Superlattices and Microstructures
JF - Superlattices and Microstructures
SN - 0749-6036
IS - 1
ER -