The effect of the thickness and oxygen ratio control of radio-frequency magnetron sputtering on MgZnO thin-film transistors

Jyun Yi Li, Sheng Po Chang, Shoou Jinn Chang, Hung Hsu Lin, Ming Hung Hsu

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

In this study, we use silicon dioxide for a magnesium-zinc-oxide thin-film transistor gate dielectric layer, controlling the thickness of the active layer and the Mg content of the film by radio-frequency (RF) sputtering. With an ideal thickness, a magnesium-zinc-oxide thin-film transistor can function normally. As the active layer thickness is controlled at 10 nm and the sputtering oxygen-flow rate is controlled at 14% to properly compensate for the oxygen vacancies, we can obtain the best features. The result of the analysis showed a field-effect mobility of 5.65 cm2/V·s, a threshold voltage of 3.1 V, a subthreshold swing improved to 0.80, and a current-switch ratio of over five orders of magnitude.

Original languageEnglish
Pages (from-to)2037-2040
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume17
Issue number3
DOIs
Publication statusPublished - 2017 Mar 1

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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