The effect of thermal annealing on the Ni/Au contact of p-type GaN

J. K. Sheu, Y. K. Su, G. C. Chi, W. C. Chen, C. Y. Chen, C. N. Huang, J. M. Hong, Y. C. Yu, C. W. Wang, E. K. Lin

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Abstract

In this study, the Ni/Au layers prepared by electron beam evaporation and thermal alloying were used to form Ohmic contacts on p-type GaN films. Before thermal alloying, the current-voltage (I-V) characteristic of Ni/Au contact on p-type GaN film shows non-Ohmic behavior. As the alloying temperature increases to 700°C, the I-V curve shows a characteristic of Ohmic contact. The Schottky barrier height reduction may be attributed to the presence of Ga-Ni and Ga-Au compounds, such as Ga4Ni3, Ga3Ni2, GaAu, and GaAu2, at the metal-semiconductor interface. The diffusing behavior of both Ni and Au have been studied by using Auger electron spectroscopy and Rutherford backscattering spectrometry. In addition, x-ray diffraction measurements indicate that the Ni3N and Ga4Ni3 compounds were formed at the metal-semiconductor interface.

Original languageEnglish
Pages (from-to)3172-3175
Number of pages4
JournalJournal of Applied Physics
Volume83
Issue number6
DOIs
Publication statusPublished - 1998 Mar 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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