The effect of ZnO replacement by ZnMgO on ZnO/CdS/Cu(In,Ga)Se2 solar cells

Jian V. Li; Xiaonan Li; Ana Kanevce; Yanfa Yan; Ingrid Repins

doi:10.1109/PVSC.2009.5411716

The effect of ZnO replacement by ZnMgO on ZnO/CdS/Cu(In,Ga)Se₂ solar cells

Jian V. Li, Xiaonan Li, Ana Kanevce, Yanfa Yan, Ingrid Repins

Department of Aeronautics and Astronautics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We studied the electrical properties and device performance of the Cu(In,Ga)Se₂ solar cell when i-ZnO is replaced by i-ZnMgO. Admittance spectroscopy reveals a deep level attributed to the i-ZnMgO/CdS interface. The capacitance voltage experiment indicates a pronounced reduction of carrier concentration in the p-CIGS absorber. Inserting a thin i-ZnO layer between i-ZnMgO and CdS completely removes the detrimental effect of the interface states and partially reverts the carrier concentration reduction effect. Device simulations indicate that the open circuit voltage is lowered due to the carrier concentration reduction while the fill factor is sensitive to the defects at the interface.

Original language	English
Title of host publication	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Pages	127-130
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2009.5411716
Publication status	Published - 2009
Event	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States Duration: 2009 Jun 7 → 2009 Jun 12

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/Territory	United States
City	Philadelphia, PA
Period	09-06-07 → 09-06-12

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2009.5411716

Cite this

@inproceedings{1ecade9e77034de2a06b4189bbee98bf,

title = "The effect of ZnO replacement by ZnMgO on ZnO/CdS/Cu(In,Ga)Se2 solar cells",

abstract = "We studied the electrical properties and device performance of the Cu(In,Ga)Se2 solar cell when i-ZnO is replaced by i-ZnMgO. Admittance spectroscopy reveals a deep level attributed to the i-ZnMgO/CdS interface. The capacitance voltage experiment indicates a pronounced reduction of carrier concentration in the p-CIGS absorber. Inserting a thin i-ZnO layer between i-ZnMgO and CdS completely removes the detrimental effect of the interface states and partially reverts the carrier concentration reduction effect. Device simulations indicate that the open circuit voltage is lowered due to the carrier concentration reduction while the fill factor is sensitive to the defects at the interface.",

author = "Li, {Jian V.} and Xiaonan Li and Ana Kanevce and Yanfa Yan and Ingrid Repins",

year = "2009",

doi = "10.1109/PVSC.2009.5411716",

language = "English",

isbn = "9781424429509",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "127--130",

booktitle = "2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009",

note = "2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 ; Conference date: 07-06-2009 Through 12-06-2009",

}

Li, JV, Li, X, Kanevce, A, Yan, Y & Repins, I 2009, The effect of ZnO replacement by ZnMgO on ZnO/CdS/Cu(In,Ga)Se₂ solar cells. in 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009., 5411716, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 127-130, 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009, Philadelphia, PA, United States, 09-06-07. https://doi.org/10.1109/PVSC.2009.5411716

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T1 - The effect of ZnO replacement by ZnMgO on ZnO/CdS/Cu(In,Ga)Se2 solar cells

AU - Li, Jian V.

AU - Li, Xiaonan

AU - Kanevce, Ana

AU - Yan, Yanfa

AU - Repins, Ingrid

PY - 2009

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N2 - We studied the electrical properties and device performance of the Cu(In,Ga)Se2 solar cell when i-ZnO is replaced by i-ZnMgO. Admittance spectroscopy reveals a deep level attributed to the i-ZnMgO/CdS interface. The capacitance voltage experiment indicates a pronounced reduction of carrier concentration in the p-CIGS absorber. Inserting a thin i-ZnO layer between i-ZnMgO and CdS completely removes the detrimental effect of the interface states and partially reverts the carrier concentration reduction effect. Device simulations indicate that the open circuit voltage is lowered due to the carrier concentration reduction while the fill factor is sensitive to the defects at the interface.

AB - We studied the electrical properties and device performance of the Cu(In,Ga)Se2 solar cell when i-ZnO is replaced by i-ZnMgO. Admittance spectroscopy reveals a deep level attributed to the i-ZnMgO/CdS interface. The capacitance voltage experiment indicates a pronounced reduction of carrier concentration in the p-CIGS absorber. Inserting a thin i-ZnO layer between i-ZnMgO and CdS completely removes the detrimental effect of the interface states and partially reverts the carrier concentration reduction effect. Device simulations indicate that the open circuit voltage is lowered due to the carrier concentration reduction while the fill factor is sensitive to the defects at the interface.

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