The effect of ZnO replacement by ZnMgO on ZnO/CdS/Cu(In,Ga)Se2 solar cells

Jian V. Li, Xiaonan Li, Ana Kanevce, Yanfa Yan, Ingrid Repins

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We studied the electrical properties and device performance of the Cu(In,Ga)Se2 solar cell when i-ZnO is replaced by i-ZnMgO. Admittance spectroscopy reveals a deep level attributed to the i-ZnMgO/CdS interface. The capacitance voltage experiment indicates a pronounced reduction of carrier concentration in the p-CIGS absorber. Inserting a thin i-ZnO layer between i-ZnMgO and CdS completely removes the detrimental effect of the interface states and partially reverts the carrier concentration reduction effect. Device simulations indicate that the open circuit voltage is lowered due to the carrier concentration reduction while the fill factor is sensitive to the defects at the interface.

Original languageEnglish
Title of host publication2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Pages127-130
Number of pages4
DOIs
Publication statusPublished - 2009 Dec 1
Event2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States
Duration: 2009 Jun 72009 Jun 12

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
CountryUnited States
CityPhiladelphia, PA
Period09-06-0709-06-12

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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