The effects of AlN buffer on the properties of InN epitaxial films grown on Si(1 1 1) by plasma-assisted molecular-beam epitaxy

C. L. Wu, C. H. Shen, H. Y. Chen, S. J. Tsai, H. W. Lin, H. M. Lee, S. Gwo, T. F. Chuang, H. S. Chang, T. M. Hsu

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