The effects of AlN buffer on the properties of InN epitaxial films grown on Si(1 1 1) by plasma-assisted molecular-beam epitaxy

Engineering & Materials Science

• Molecular beam epitaxy 100%
• Epitaxial films 98%
• Epilayers 82%
• Plasmas 59%
• Buffer layers 45%
• Optical properties 40%
• Reflection high energy electron diffraction 33%
• Nitrogen plasma 29%
• Photoluminescence 26%
• Temperature 25%
• Electron mobility 25%
• Lattice constants 23%
• Diffusion barriers 23%
• Carrier concentration 22%
• Hall effect 22%
• Atomic force microscopy 20%
• Single crystals 18%
• Structural properties 17%
• Electric properties 17%
• Crystalline materials 16%
• X ray diffraction 15%
• Scanning electron microscopy 12%
• Silicon 12%
• Substrates 11%

Chemical Compounds

• Molecular Beam Epitaxy 92%
• Epitaxial Film 91%
• Buffer Solution 41%
• Reflection High Energy Electron Diffraction 26%
• Optical Property 23%
• Hall Effect 23%
• Diffusion Barrier 20%
• Electron Mobility 19%
• Ambient Reaction Temperature 18%
• Lattice Constant 17%
• Electrical Property 13%
• Atomic Force Microscopy 12%
• Photoluminescence 12%
• Single Crystalline Solid 11%
• Scanning Electron Microscopy 9%
• Crystal Structure 8%
• X-Ray Diffraction 7%
• Liquid Film 7%

Physics & Astronomy

• molecular beam epitaxy 54%
• buffers 54%
• optical properties 16%
• nitrogen plasma 16%
• room temperature 14%
• electron mobility 13%
• high energy electrons 12%
• wurtzite 12%
• Hall effect 11%
• electron diffraction 10%
• atomic force microscopy 9%
• electrical properties 9%
• photoluminescence 9%
• scanning electron microscopy 8%
• single crystals 8%
• silicon 6%
• diffraction 6%
• electronics 6%
• x rays 5%