The effects of annealing and Si content on the charge-discharge characteristics of Al-Si thin film with pre-deposited Al layer

Chao Han Wu, Fei-Yi Hung, Truan-Sheng Lui, Li Hui Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, radio frequency magnetron sputtering was used to prepare Al-Si film anodes and the effect of both pre-sputtered Al thin film and oxygen fraction(17 → 7 at. %) within the Al-Si film on the charge-discharge capacity characteristics are discussed. The pre-sputtered 40nm Al thin film not only reduced the resistivity of the composite anode film, but also diffused to prevent peeling between the Al-Si films and Cu foils after annealing in the vacuum. Owing to the above reasons, the stability for the charge-discharge cycling life at high temperature (55°C) was achieved. The reduction of oxygen fraction in the Al-Si film also led to an improvement on capacity of the anode.

Original languageEnglish
Title of host publicationTMS 2011 - 140th Annual Meeting and Exhibition, Supplemental Proceedings
Pages127-134
Number of pages8
Publication statusPublished - 2011 Jul 26
EventTMS 2011 - 140th Annual Meeting and Exhibition - San Diego, CA, United States
Duration: 2011 Feb 272011 Mar 3

Publication series

NameTMS Annual Meeting
Volume1

Other

OtherTMS 2011 - 140th Annual Meeting and Exhibition
CountryUnited States
CitySan Diego, CA
Period11-02-2711-03-03

Fingerprint

Annealing
Thin films
annealing
thin films
Anodes
anodes
Oxygen
peeling
Peeling
oxygen
Magnetron sputtering
Metal foil
foils
radio frequencies
magnetron sputtering
Vacuum
vacuum
cycles
electrical resistivity
composite materials

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys

Cite this

Wu, C. H., Hung, F-Y., Lui, T-S., & Chen, L. H. (2011). The effects of annealing and Si content on the charge-discharge characteristics of Al-Si thin film with pre-deposited Al layer. In TMS 2011 - 140th Annual Meeting and Exhibition, Supplemental Proceedings (pp. 127-134). (TMS Annual Meeting; Vol. 1).
Wu, Chao Han ; Hung, Fei-Yi ; Lui, Truan-Sheng ; Chen, Li Hui. / The effects of annealing and Si content on the charge-discharge characteristics of Al-Si thin film with pre-deposited Al layer. TMS 2011 - 140th Annual Meeting and Exhibition, Supplemental Proceedings. 2011. pp. 127-134 (TMS Annual Meeting).
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abstract = "In this study, radio frequency magnetron sputtering was used to prepare Al-Si film anodes and the effect of both pre-sputtered Al thin film and oxygen fraction(17 → 7 at. {\%}) within the Al-Si film on the charge-discharge capacity characteristics are discussed. The pre-sputtered 40nm Al thin film not only reduced the resistivity of the composite anode film, but also diffused to prevent peeling between the Al-Si films and Cu foils after annealing in the vacuum. Owing to the above reasons, the stability for the charge-discharge cycling life at high temperature (55°C) was achieved. The reduction of oxygen fraction in the Al-Si film also led to an improvement on capacity of the anode.",
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Wu, CH, Hung, F-Y, Lui, T-S & Chen, LH 2011, The effects of annealing and Si content on the charge-discharge characteristics of Al-Si thin film with pre-deposited Al layer. in TMS 2011 - 140th Annual Meeting and Exhibition, Supplemental Proceedings. TMS Annual Meeting, vol. 1, pp. 127-134, TMS 2011 - 140th Annual Meeting and Exhibition, San Diego, CA, United States, 11-02-27.

The effects of annealing and Si content on the charge-discharge characteristics of Al-Si thin film with pre-deposited Al layer. / Wu, Chao Han; Hung, Fei-Yi; Lui, Truan-Sheng; Chen, Li Hui.

TMS 2011 - 140th Annual Meeting and Exhibition, Supplemental Proceedings. 2011. p. 127-134 (TMS Annual Meeting; Vol. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Wu CH, Hung F-Y, Lui T-S, Chen LH. The effects of annealing and Si content on the charge-discharge characteristics of Al-Si thin film with pre-deposited Al layer. In TMS 2011 - 140th Annual Meeting and Exhibition, Supplemental Proceedings. 2011. p. 127-134. (TMS Annual Meeting).