The effects of annealing and Si content on the charge-discharge characteristics of Al-Si thin film with pre-deposited Al layer

Chao Han Wu, Fei Yi Hung, Truan Sheng Lui, Li Hui Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, radio frequency magnetron sputtering was used to prepare Al-Si film anodes and the effect of both pre-sputtered Al thin film and oxygen fraction(17 → 7 at. %) within the Al-Si film on the charge-discharge capacity characteristics are discussed. The pre-sputtered 40nm Al thin film not only reduced the resistivity of the composite anode film, but also diffused to prevent peeling between the Al-Si films and Cu foils after annealing in the vacuum. Owing to the above reasons, the stability for the charge-discharge cycling life at high temperature (55°C) was achieved. The reduction of oxygen fraction in the Al-Si film also led to an improvement on capacity of the anode.

Original languageEnglish
Title of host publicationMaterials Processing and Energy Materials
PublisherMinerals, Metals and Materials Society
Pages127-134
Number of pages8
ISBN (Print)9781118029459
DOIs
Publication statusPublished - 2011

Publication series

NameTMS Annual Meeting
Volume1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys

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    Wu, C. H., Hung, F. Y., Lui, T. S., & Chen, L. H. (2011). The effects of annealing and Si content on the charge-discharge characteristics of Al-Si thin film with pre-deposited Al layer. In Materials Processing and Energy Materials (pp. 127-134). (TMS Annual Meeting; Vol. 1). Minerals, Metals and Materials Society. https://doi.org/10.1002/9781118062111.ch13