The effects of annealing atmosphere on the electrical properties of MgNb2O6/ITO Heterostructures

Yi Da Ho; Kung Rong Chen; Pei Ching Yu; Cheng Liang Huang

doi:10.1111/jace.13340

The effects of annealing atmosphere on the electrical properties of MgNb₂O₆/ITO Heterostructures

Yi Da Ho, Kung Rong Chen, Pei Ching Yu, Cheng Liang Huang

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The effects of annealing atmosphere (N₂, air and O₂) on the electrical properties of sol-gel-derived MgNb₂O₆/ITO heterostructures are discussed in this work. All samples exhibited the amorphous phase and were highly transparent. The percentage of Nb⁴⁺ content increased when the films were annealed in the oxygen-deficient conditions, which could lead to semiconducting films. In addition, the results show that the electrical properties of sol-gel-derived MgNb₂O₆ thin films could be tuned based on the annealing atmosphere. Moreover, the conduction mechanisms of MgNb₂O₆/ITO heterostructures are also discussed in this study. The results show that MgNb₂O₆ thin films have potential for use in multifunctional optoelectronic applications, due to their flexible electrical properties and good transparency.

Original language	English
Pages (from-to)	580-586
Number of pages	7
Journal	Journal of the American Ceramic Society
Volume	98
Issue number	2
DOIs	https://doi.org/10.1111/jace.13340
Publication status	Published - 2014 Dec 3

All Science Journal Classification (ASJC) codes

Ceramics and Composites
Materials Chemistry

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10.1111/jace.13340

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abstract = "The effects of annealing atmosphere (N2, air and O2) on the electrical properties of sol-gel-derived MgNb2O6/ITO heterostructures are discussed in this work. All samples exhibited the amorphous phase and were highly transparent. The percentage of Nb4+ content increased when the films were annealed in the oxygen-deficient conditions, which could lead to semiconducting films. In addition, the results show that the electrical properties of sol-gel-derived MgNb2O6 thin films could be tuned based on the annealing atmosphere. Moreover, the conduction mechanisms of MgNb2O6/ITO heterostructures are also discussed in this study. The results show that MgNb2O6 thin films have potential for use in multifunctional optoelectronic applications, due to their flexible electrical properties and good transparency.",

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AU - Ho, Yi Da

AU - Chen, Kung Rong

AU - Yu, Pei Ching

AU - Huang, Cheng Liang

PY - 2014/12/3

Y1 - 2014/12/3

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AB - The effects of annealing atmosphere (N2, air and O2) on the electrical properties of sol-gel-derived MgNb2O6/ITO heterostructures are discussed in this work. All samples exhibited the amorphous phase and were highly transparent. The percentage of Nb4+ content increased when the films were annealed in the oxygen-deficient conditions, which could lead to semiconducting films. In addition, the results show that the electrical properties of sol-gel-derived MgNb2O6 thin films could be tuned based on the annealing atmosphere. Moreover, the conduction mechanisms of MgNb2O6/ITO heterostructures are also discussed in this study. The results show that MgNb2O6 thin films have potential for use in multifunctional optoelectronic applications, due to their flexible electrical properties and good transparency.

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The effects of annealing atmosphere on the electrical properties of MgNb₂O₆/ITO Heterostructures

Abstract

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