The effects of oxygen content on bonding configurations and properties of low-k organosilicate glass dielectric films

Sheng Wen Chen, Chuan-Pu Liu, Shiu Ko JangJian, Ying Lang Wang

Research output: Contribution to journalArticle

Abstract

The low dielectric constant SiOC:H films of plasma enhanced chemical vapor deposition method have been developed with various precursor ratio. The reduction of the dielectric constant has been achieved by increasing the porosity in the films through the change of precursor ratio. In order to clarify the relation between dielectric constant and film porosity, the small angle X-ray scattering technique has been applied for characterizing pore size in the porous low-k dielectric films. The effects of the oxygen on the bonding configuration and electrical properties were investigated by adjusting TMS/O 2 gas ratios. The porous SiOC:H film displays the small pore sizes and lower dielectric constant. It is found that the pore size of SiOC:H film is significant smaller than 1 nm and the pore size attributed to Si-O-Si cage structure change.

Original languageEnglish
Pages (from-to)2549-2553
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume8
Issue number5
DOIs
Publication statusPublished - 2008 May 1

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Dielectric films
Porosity
Pore size
Glass
Permittivity
Oxygen
porosity
glass
oxygen
configurations
permittivity
Gases
X-Rays
Plasma enhanced chemical vapor deposition
X ray scattering
Electric properties
adjusting
electrical properties
vapor deposition
scattering

All Science Journal Classification (ASJC) codes

  • Medicine(all)

Cite this

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abstract = "The low dielectric constant SiOC:H films of plasma enhanced chemical vapor deposition method have been developed with various precursor ratio. The reduction of the dielectric constant has been achieved by increasing the porosity in the films through the change of precursor ratio. In order to clarify the relation between dielectric constant and film porosity, the small angle X-ray scattering technique has been applied for characterizing pore size in the porous low-k dielectric films. The effects of the oxygen on the bonding configuration and electrical properties were investigated by adjusting TMS/O 2 gas ratios. The porous SiOC:H film displays the small pore sizes and lower dielectric constant. It is found that the pore size of SiOC:H film is significant smaller than 1 nm and the pore size attributed to Si-O-Si cage structure change.",
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The effects of oxygen content on bonding configurations and properties of low-k organosilicate glass dielectric films. / Chen, Sheng Wen; Liu, Chuan-Pu; JangJian, Shiu Ko; Wang, Ying Lang.

In: Journal of Nanoscience and Nanotechnology, Vol. 8, No. 5, 01.05.2008, p. 2549-2553.

Research output: Contribution to journalArticle

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AU - Chen, Sheng Wen

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