TY - GEN
T1 - The Effects of Time-Dependent Inelastic Behaviors on the Debonding of Cu-Polyimide Interface
AU - Wang, Chien Yu
AU - Chiu, Tz Cheng
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - Multilayered fan-in or fan-out (FO) redistribution interconnects are used extensively in advanced package designs for many state-of-theart high-performance computing and portable applications. A common feature of the various redistribution interconnect designs is the high density of materials interfaces between metal conductors and ceramic or polymeric dielectrics. While the design offers significant benefit in electrical performance, the lack of strong bonds between the dissimilar materials leads to a higher risk in delamination failure under process and reliability test conditions. In the estimations of the mechanical or thermomechanical debond driving forces, an important factor to be considered is the time-dependent inelastic behaviors of metals and polymers. Under thermal or mechanical loading conditions, the energy dissipation in the layered structure is not only through the breaking of the weak chemical bonds at the dissimilar materials interface, but also through the viscoelastic and viscoplastic deformations of the polymer and metals around the interface. From the perspectives of the thermomechanical reliability and structural design of the redistribution interconnect, it is important to evaluate the contributions of the inelastic energy absorptions of the metal and polymer and their effects on the interface debond growth.In this study, the influences of the viscoelastic behavior of polyimide (PI) dielectric and the viscoplastic behavior of Cu metallization on the debonding driving force of the redistribution interconnect is considered. The thermoviscoelastic constitutive behavior of the PI thin film was modelled by using a generalized Maxwell model with time-temperature superposition scheme. The viscoplastic behavior the Cu interconnect was considered by using the Anand model. A finite-element based numerical model was developed to evaluate the debonding growth at the Cu-PI interface. The model was first applied to evaluate the energy dissipations of the inelastic materials and their influences on the debonding strain energy release rate under either Mode-I or mixed-mode loading conditions. The effects of temperature and loading rate on the partition of energy dissipation through interface separation, viscoelastic and viscoplastic deformations were also discussed. The model was then applied to investigate an interface crack in redistribution interconnect under thermomechanical load. The numerical procedure developed in this study can be implemented to enable a quick evaluation of the interconnect geometry and materials selection for package design and process development.
AB - Multilayered fan-in or fan-out (FO) redistribution interconnects are used extensively in advanced package designs for many state-of-theart high-performance computing and portable applications. A common feature of the various redistribution interconnect designs is the high density of materials interfaces between metal conductors and ceramic or polymeric dielectrics. While the design offers significant benefit in electrical performance, the lack of strong bonds between the dissimilar materials leads to a higher risk in delamination failure under process and reliability test conditions. In the estimations of the mechanical or thermomechanical debond driving forces, an important factor to be considered is the time-dependent inelastic behaviors of metals and polymers. Under thermal or mechanical loading conditions, the energy dissipation in the layered structure is not only through the breaking of the weak chemical bonds at the dissimilar materials interface, but also through the viscoelastic and viscoplastic deformations of the polymer and metals around the interface. From the perspectives of the thermomechanical reliability and structural design of the redistribution interconnect, it is important to evaluate the contributions of the inelastic energy absorptions of the metal and polymer and their effects on the interface debond growth.In this study, the influences of the viscoelastic behavior of polyimide (PI) dielectric and the viscoplastic behavior of Cu metallization on the debonding driving force of the redistribution interconnect is considered. The thermoviscoelastic constitutive behavior of the PI thin film was modelled by using a generalized Maxwell model with time-temperature superposition scheme. The viscoplastic behavior the Cu interconnect was considered by using the Anand model. A finite-element based numerical model was developed to evaluate the debonding growth at the Cu-PI interface. The model was first applied to evaluate the energy dissipations of the inelastic materials and their influences on the debonding strain energy release rate under either Mode-I or mixed-mode loading conditions. The effects of temperature and loading rate on the partition of energy dissipation through interface separation, viscoelastic and viscoplastic deformations were also discussed. The model was then applied to investigate an interface crack in redistribution interconnect under thermomechanical load. The numerical procedure developed in this study can be implemented to enable a quick evaluation of the interconnect geometry and materials selection for package design and process development.
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U2 - 10.1109/IMPACT56280.2022.9966725
DO - 10.1109/IMPACT56280.2022.9966725
M3 - Conference contribution
AN - SCOPUS:85144024449
T3 - Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT
BT - Proceedings - 2022 17th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2022
PB - IEEE Computer Society
T2 - 17th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2022
Y2 - 26 October 2022 through 28 October 2022
ER -