@inproceedings{ed360a1342114497a57f6e53b4fdf1e0,
title = "The enhancement of the electron field emission behavior of diamond/CNTs materials via the plasma post-treatment process for the applications in triode-type vacuum field emission transistor",
abstract = "Plasma post-treatment (ppt) process for enhancing the electron field emission (EFE) properties of diamond/CNTs films for the applications in triode vacuum field emission (VFE) transistors is being reported. The EFE properties of UNCD/CNTs films were markedly improved by modifying the granular structure by ppt-process. The factor which resulted in enhanced EFE properties is due to the formation of nano-graphitic layers, while the nano-sized diamond grains coalesced. The triode VFE transistors performance was also significantly enhanced due to the utilization of DGC/CNTs (or HiD/CNTs) films as cathode that renders the triode VFE transistors possessing great potential for applications in vacuum microelectronics.",
author = "Divinah Manoharan and Chang, {Hsin Tze} and Lin, {I. Nan} and Chang, {Ting Hsun} and Hsieh, {Ping Yen} and Srinivasu Kunuku and Leou, {Keh Chyang} and Lee, {Chi Young} and Tai, {Nyan Hwa}",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 29th International Vacuum Nanoelectronics Conference, IVNC 2016 ; Conference date: 11-07-2016 Through 15-07-2016",
year = "2016",
month = aug,
day = "24",
doi = "10.1109/IVNC.2016.7551450",
language = "English",
series = "2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016",
address = "United States",
}