The influence of Ir1-xMnx composition and post-annealing on structure and exchange bias of epitaxial Ir 1-xMnx(∼ 10 nm)/Ni80Fe20(7 nm) films were studied. The Ir1-xMnx layer was prepared by MBE growth of [Mn(0.4 nm<X nm<0.7 nm)/Ir(0.2 nm)]N multilayer films. The optimal Hex increases to ∼ 190 Oe after annealing at 533 K for 3 h. X-ray diffraction indicates that the strength of exchange bias is increased with the order parameter of Ir1-xMnx alloy.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering