Abstract
Pb(Zr,Ti)O 3 (PZT) thin films with lower gel concentration of 0.2 M to 0.3 M were ceposited on Al/Al 2 O 3 substrate via a sol-gel process, using lead acetate, zirconium npropoxide and titanium isopro-poxide as raw precursors, propyl alcohol as a solvent and acetate acid as a chelating agent and catalyst. After a batch of step (drying, pre-baking), sintered at higher temperature the amorphous PZT thin films were changed to perovskite-type crystal structure. The effect of variables such as gel solutions concentration and heating rate on morphology were investigated to conduct for preparing crack-free PZT thin films. The results showed that the cracking problem is reduced by employing for lower gel concentration 0.2 M with drying at 150°C for 5 min and pre-baking at 350°C for 10 min and then sintering at 700°C for 30 min with heating rate 50°C/min. We also measured P-E hystersis loop using Sawyer-Tower circuit, the values of the remanent polarization (P r ) and coercive field (E c ) are around 11.39 c/cm 2 and 84.52 KV/cm, respectively. We also reported on the preparation and performance of a SAW resonator on PZT piezoelectric thin films coated on Al/Al 2 O 3 substrate. Because of existing porous nature, crack-free PZT thin films were further surveyed for satisfactory SAW and FBAR devices on broadband application based on Al/Al 2 O 3 structure.
| Original language | English |
|---|---|
| Pages (from-to) | 1742-1745 |
| Number of pages | 4 |
| Journal | Proceedings of the IEEE Ultrasonics Symposium |
| Volume | 2 |
| Publication status | Published - 2003 Dec 1 |
| Event | 2003 IEEE Ultrasonics Symposium - Proceedings - Honolulu, HI, United States Duration: 2003 Oct 5 → 2003 Oct 8 |
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All Science Journal Classification (ASJC) codes
- Acoustics and Ultrasonics
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The fabrication of PB(ZR,TI)O 3 films on a AL/AL 2 O 3 structure employing a crack amendment process . / Chen, Bing Huei; Huang, Cheng-Liang; Wu, Long.
In: Proceedings of the IEEE Ultrasonics Symposium, Vol. 2, 01.12.2003, p. 1742-1745.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - The fabrication of PB(ZR,TI)O 3 films on a AL/AL 2 O 3 structure employing a crack amendment process
AU - Chen, Bing Huei
AU - Huang, Cheng-Liang
AU - Wu, Long
PY - 2003/12/1
Y1 - 2003/12/1
N2 - Pb(Zr,Ti)O 3 (PZT) thin films with lower gel concentration of 0.2 M to 0.3 M were ceposited on Al/Al 2 O 3 substrate via a sol-gel process, using lead acetate, zirconium npropoxide and titanium isopro-poxide as raw precursors, propyl alcohol as a solvent and acetate acid as a chelating agent and catalyst. After a batch of step (drying, pre-baking), sintered at higher temperature the amorphous PZT thin films were changed to perovskite-type crystal structure. The effect of variables such as gel solutions concentration and heating rate on morphology were investigated to conduct for preparing crack-free PZT thin films. The results showed that the cracking problem is reduced by employing for lower gel concentration 0.2 M with drying at 150°C for 5 min and pre-baking at 350°C for 10 min and then sintering at 700°C for 30 min with heating rate 50°C/min. We also measured P-E hystersis loop using Sawyer-Tower circuit, the values of the remanent polarization (P r ) and coercive field (E c ) are around 11.39 c/cm 2 and 84.52 KV/cm, respectively. We also reported on the preparation and performance of a SAW resonator on PZT piezoelectric thin films coated on Al/Al 2 O 3 substrate. Because of existing porous nature, crack-free PZT thin films were further surveyed for satisfactory SAW and FBAR devices on broadband application based on Al/Al 2 O 3 structure.
AB - Pb(Zr,Ti)O 3 (PZT) thin films with lower gel concentration of 0.2 M to 0.3 M were ceposited on Al/Al 2 O 3 substrate via a sol-gel process, using lead acetate, zirconium npropoxide and titanium isopro-poxide as raw precursors, propyl alcohol as a solvent and acetate acid as a chelating agent and catalyst. After a batch of step (drying, pre-baking), sintered at higher temperature the amorphous PZT thin films were changed to perovskite-type crystal structure. The effect of variables such as gel solutions concentration and heating rate on morphology were investigated to conduct for preparing crack-free PZT thin films. The results showed that the cracking problem is reduced by employing for lower gel concentration 0.2 M with drying at 150°C for 5 min and pre-baking at 350°C for 10 min and then sintering at 700°C for 30 min with heating rate 50°C/min. We also measured P-E hystersis loop using Sawyer-Tower circuit, the values of the remanent polarization (P r ) and coercive field (E c ) are around 11.39 c/cm 2 and 84.52 KV/cm, respectively. We also reported on the preparation and performance of a SAW resonator on PZT piezoelectric thin films coated on Al/Al 2 O 3 substrate. Because of existing porous nature, crack-free PZT thin films were further surveyed for satisfactory SAW and FBAR devices on broadband application based on Al/Al 2 O 3 structure.
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M3 - Conference article
AN - SCOPUS:4143130265
VL - 2
SP - 1742
EP - 1745
JO - Proceedings of the IEEE Ultrasonics Symposium
JF - Proceedings of the IEEE Ultrasonics Symposium
SN - 1051-0117
ER -