The fabrication of PB(ZR,TI)O 3 films on a AL/AL 2 O 3 structure employing a crack amendment process

Bing Huei Chen, Cheng-Liang Huang, Long Wu

Research output: Contribution to journalConference article

Abstract

Pb(Zr,Ti)O 3 (PZT) thin films with lower gel concentration of 0.2 M to 0.3 M were ceposited on Al/Al 2 O 3 substrate via a sol-gel process, using lead acetate, zirconium npropoxide and titanium isopro-poxide as raw precursors, propyl alcohol as a solvent and acetate acid as a chelating agent and catalyst. After a batch of step (drying, pre-baking), sintered at higher temperature the amorphous PZT thin films were changed to perovskite-type crystal structure. The effect of variables such as gel solutions concentration and heating rate on morphology were investigated to conduct for preparing crack-free PZT thin films. The results showed that the cracking problem is reduced by employing for lower gel concentration 0.2 M with drying at 150°C for 5 min and pre-baking at 350°C for 10 min and then sintering at 700°C for 30 min with heating rate 50°C/min. We also measured P-E hystersis loop using Sawyer-Tower circuit, the values of the remanent polarization (P r ) and coercive field (E c ) are around 11.39 c/cm 2 and 84.52 KV/cm, respectively. We also reported on the preparation and performance of a SAW resonator on PZT piezoelectric thin films coated on Al/Al 2 O 3 substrate. Because of existing porous nature, crack-free PZT thin films were further surveyed for satisfactory SAW and FBAR devices on broadband application based on Al/Al 2 O 3 structure.

Original languageEnglish
Pages (from-to)1742-1745
Number of pages4
JournalProceedings of the IEEE Ultrasonics Symposium
Volume2
Publication statusPublished - 2003 Dec 1
Event2003 IEEE Ultrasonics Symposium - Proceedings - Honolulu, HI, United States
Duration: 2003 Oct 52003 Oct 8

Fingerprint

cracks
fabrication
thin films
baking
gels
drying
lead acetates
heating
towers
sol-gel processes
acetates
sintering
alcohols
titanium
resonators
broadband
catalysts
preparation
acids
crystal structure

All Science Journal Classification (ASJC) codes

  • Acoustics and Ultrasonics

Cite this

@article{242a752cb1da4f0785a3caf601ecab1b,
title = "The fabrication of PB(ZR,TI)O 3 films on a AL/AL 2 O 3 structure employing a crack amendment process",
abstract = "Pb(Zr,Ti)O 3 (PZT) thin films with lower gel concentration of 0.2 M to 0.3 M were ceposited on Al/Al 2 O 3 substrate via a sol-gel process, using lead acetate, zirconium npropoxide and titanium isopro-poxide as raw precursors, propyl alcohol as a solvent and acetate acid as a chelating agent and catalyst. After a batch of step (drying, pre-baking), sintered at higher temperature the amorphous PZT thin films were changed to perovskite-type crystal structure. The effect of variables such as gel solutions concentration and heating rate on morphology were investigated to conduct for preparing crack-free PZT thin films. The results showed that the cracking problem is reduced by employing for lower gel concentration 0.2 M with drying at 150°C for 5 min and pre-baking at 350°C for 10 min and then sintering at 700°C for 30 min with heating rate 50°C/min. We also measured P-E hystersis loop using Sawyer-Tower circuit, the values of the remanent polarization (P r ) and coercive field (E c ) are around 11.39 c/cm 2 and 84.52 KV/cm, respectively. We also reported on the preparation and performance of a SAW resonator on PZT piezoelectric thin films coated on Al/Al 2 O 3 substrate. Because of existing porous nature, crack-free PZT thin films were further surveyed for satisfactory SAW and FBAR devices on broadband application based on Al/Al 2 O 3 structure.",
author = "Chen, {Bing Huei} and Cheng-Liang Huang and Long Wu",
year = "2003",
month = "12",
day = "1",
language = "English",
volume = "2",
pages = "1742--1745",
journal = "Proceedings of the IEEE Ultrasonics Symposium",
issn = "1051-0117",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

The fabrication of PB(ZR,TI)O 3 films on a AL/AL 2 O 3 structure employing a crack amendment process . / Chen, Bing Huei; Huang, Cheng-Liang; Wu, Long.

In: Proceedings of the IEEE Ultrasonics Symposium, Vol. 2, 01.12.2003, p. 1742-1745.

Research output: Contribution to journalConference article

TY - JOUR

T1 - The fabrication of PB(ZR,TI)O 3 films on a AL/AL 2 O 3 structure employing a crack amendment process

AU - Chen, Bing Huei

AU - Huang, Cheng-Liang

AU - Wu, Long

PY - 2003/12/1

Y1 - 2003/12/1

N2 - Pb(Zr,Ti)O 3 (PZT) thin films with lower gel concentration of 0.2 M to 0.3 M were ceposited on Al/Al 2 O 3 substrate via a sol-gel process, using lead acetate, zirconium npropoxide and titanium isopro-poxide as raw precursors, propyl alcohol as a solvent and acetate acid as a chelating agent and catalyst. After a batch of step (drying, pre-baking), sintered at higher temperature the amorphous PZT thin films were changed to perovskite-type crystal structure. The effect of variables such as gel solutions concentration and heating rate on morphology were investigated to conduct for preparing crack-free PZT thin films. The results showed that the cracking problem is reduced by employing for lower gel concentration 0.2 M with drying at 150°C for 5 min and pre-baking at 350°C for 10 min and then sintering at 700°C for 30 min with heating rate 50°C/min. We also measured P-E hystersis loop using Sawyer-Tower circuit, the values of the remanent polarization (P r ) and coercive field (E c ) are around 11.39 c/cm 2 and 84.52 KV/cm, respectively. We also reported on the preparation and performance of a SAW resonator on PZT piezoelectric thin films coated on Al/Al 2 O 3 substrate. Because of existing porous nature, crack-free PZT thin films were further surveyed for satisfactory SAW and FBAR devices on broadband application based on Al/Al 2 O 3 structure.

AB - Pb(Zr,Ti)O 3 (PZT) thin films with lower gel concentration of 0.2 M to 0.3 M were ceposited on Al/Al 2 O 3 substrate via a sol-gel process, using lead acetate, zirconium npropoxide and titanium isopro-poxide as raw precursors, propyl alcohol as a solvent and acetate acid as a chelating agent and catalyst. After a batch of step (drying, pre-baking), sintered at higher temperature the amorphous PZT thin films were changed to perovskite-type crystal structure. The effect of variables such as gel solutions concentration and heating rate on morphology were investigated to conduct for preparing crack-free PZT thin films. The results showed that the cracking problem is reduced by employing for lower gel concentration 0.2 M with drying at 150°C for 5 min and pre-baking at 350°C for 10 min and then sintering at 700°C for 30 min with heating rate 50°C/min. We also measured P-E hystersis loop using Sawyer-Tower circuit, the values of the remanent polarization (P r ) and coercive field (E c ) are around 11.39 c/cm 2 and 84.52 KV/cm, respectively. We also reported on the preparation and performance of a SAW resonator on PZT piezoelectric thin films coated on Al/Al 2 O 3 substrate. Because of existing porous nature, crack-free PZT thin films were further surveyed for satisfactory SAW and FBAR devices on broadband application based on Al/Al 2 O 3 structure.

UR - http://www.scopus.com/inward/record.url?scp=4143130265&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4143130265&partnerID=8YFLogxK

M3 - Conference article

VL - 2

SP - 1742

EP - 1745

JO - Proceedings of the IEEE Ultrasonics Symposium

JF - Proceedings of the IEEE Ultrasonics Symposium

SN - 1051-0117

ER -