The fabrication of ZnO nanowire field-effect transistors combining dielectrophoresis and hot-pressing

Yi Kuei Chang, Franklin Chau-Nan Hong

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)

Abstract

Zinc oxide nanowire field-effect transistors (NW-FETs) were fabricated combining the dielectrophoresis (DEP) and the hot-pressing methods. DEP was used to position both ends of the nanowires on top of the source and the drain electrodes, respectively. Hot-pressing of nanowires on the electrodes was then employed to ensure good contacts between the nanowires and the electrodes. The good device performance achieved with our method of fabrication indicates that DEP combined with hot-pressing has the potential to be applied to the fabrication of flexible electronics on a roll-to-roll basis.

Original languageEnglish
Article number235202
JournalNanotechnology
Volume20
Issue number23
DOIs
Publication statusPublished - 2009 Jun 29

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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