The ferroelectricity of Bi0.9Pb0.1FeO3 films grown on atomic flat SrRuO3/SrTiO3 substrates

H. Chou, K. C. Liu, C. T. Wu, C. P. Wu, M. Bohra, A. Pyatakov, Yi-Chun Chen, C. C. Yu, S. J. Sun

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Bi0.9Pb0.1FeO3 (BPFO) films were grown on SrRuO3 (SRO)/SrTiO3 (STO) substrates. The surface morphology of BPFO films is highly dependent on that of the SRO layer. Though the step height of STO (100) substrate is equal to one unit cell of STO crystal, the height and width of steps on the surface of SRO and BPFO are larger, which supports a step bunching growth mode on both the SRO layer and BPFO films. At zero bias voltage, the BPFO film exhibits a natural dipole polarization toward the SRO layer, which is believed to be due to the negative charge accumulation at the BPFO/SRO interface, and manifests of 71° and 109° but 180° domain walls. Doping of Pb distorted the BPFO crystal lattice to near cubic that weakens the electric anisotropy and forms a two-step flipping process. To complete a 180° dipole flipping procedure, the dipole moment first rotates 71° to adjacent states followed by a 109° rotation to the final 180° state.

Original languageEnglish
Article number17D914
JournalJournal of Applied Physics
Volume113
Issue number17
DOIs
Publication statusPublished - 2013 May 7

Fingerprint

ferroelectricity
dipoles
bunching
crystal lattices
domain wall
dipole moments
anisotropy
electric potential
polarization
cells
crystals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Chou, H., Liu, K. C., Wu, C. T., Wu, C. P., Bohra, M., Pyatakov, A., ... Sun, S. J. (2013). The ferroelectricity of Bi0.9Pb0.1FeO3 films grown on atomic flat SrRuO3/SrTiO3 substrates. Journal of Applied Physics, 113(17), [17D914]. https://doi.org/10.1063/1.4795846
Chou, H. ; Liu, K. C. ; Wu, C. T. ; Wu, C. P. ; Bohra, M. ; Pyatakov, A. ; Chen, Yi-Chun ; Yu, C. C. ; Sun, S. J. / The ferroelectricity of Bi0.9Pb0.1FeO3 films grown on atomic flat SrRuO3/SrTiO3 substrates. In: Journal of Applied Physics. 2013 ; Vol. 113, No. 17.
@article{9603ec9952064af4868910d66e994486,
title = "The ferroelectricity of Bi0.9Pb0.1FeO3 films grown on atomic flat SrRuO3/SrTiO3 substrates",
abstract = "Bi0.9Pb0.1FeO3 (BPFO) films were grown on SrRuO3 (SRO)/SrTiO3 (STO) substrates. The surface morphology of BPFO films is highly dependent on that of the SRO layer. Though the step height of STO (100) substrate is equal to one unit cell of STO crystal, the height and width of steps on the surface of SRO and BPFO are larger, which supports a step bunching growth mode on both the SRO layer and BPFO films. At zero bias voltage, the BPFO film exhibits a natural dipole polarization toward the SRO layer, which is believed to be due to the negative charge accumulation at the BPFO/SRO interface, and manifests of 71° and 109° but 180° domain walls. Doping of Pb distorted the BPFO crystal lattice to near cubic that weakens the electric anisotropy and forms a two-step flipping process. To complete a 180° dipole flipping procedure, the dipole moment first rotates 71° to adjacent states followed by a 109° rotation to the final 180° state.",
author = "H. Chou and Liu, {K. C.} and Wu, {C. T.} and Wu, {C. P.} and M. Bohra and A. Pyatakov and Yi-Chun Chen and Yu, {C. C.} and Sun, {S. J.}",
year = "2013",
month = "5",
day = "7",
doi = "10.1063/1.4795846",
language = "English",
volume = "113",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "17",

}

Chou, H, Liu, KC, Wu, CT, Wu, CP, Bohra, M, Pyatakov, A, Chen, Y-C, Yu, CC & Sun, SJ 2013, 'The ferroelectricity of Bi0.9Pb0.1FeO3 films grown on atomic flat SrRuO3/SrTiO3 substrates', Journal of Applied Physics, vol. 113, no. 17, 17D914. https://doi.org/10.1063/1.4795846

The ferroelectricity of Bi0.9Pb0.1FeO3 films grown on atomic flat SrRuO3/SrTiO3 substrates. / Chou, H.; Liu, K. C.; Wu, C. T.; Wu, C. P.; Bohra, M.; Pyatakov, A.; Chen, Yi-Chun; Yu, C. C.; Sun, S. J.

In: Journal of Applied Physics, Vol. 113, No. 17, 17D914, 07.05.2013.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The ferroelectricity of Bi0.9Pb0.1FeO3 films grown on atomic flat SrRuO3/SrTiO3 substrates

AU - Chou, H.

AU - Liu, K. C.

AU - Wu, C. T.

AU - Wu, C. P.

AU - Bohra, M.

AU - Pyatakov, A.

AU - Chen, Yi-Chun

AU - Yu, C. C.

AU - Sun, S. J.

PY - 2013/5/7

Y1 - 2013/5/7

N2 - Bi0.9Pb0.1FeO3 (BPFO) films were grown on SrRuO3 (SRO)/SrTiO3 (STO) substrates. The surface morphology of BPFO films is highly dependent on that of the SRO layer. Though the step height of STO (100) substrate is equal to one unit cell of STO crystal, the height and width of steps on the surface of SRO and BPFO are larger, which supports a step bunching growth mode on both the SRO layer and BPFO films. At zero bias voltage, the BPFO film exhibits a natural dipole polarization toward the SRO layer, which is believed to be due to the negative charge accumulation at the BPFO/SRO interface, and manifests of 71° and 109° but 180° domain walls. Doping of Pb distorted the BPFO crystal lattice to near cubic that weakens the electric anisotropy and forms a two-step flipping process. To complete a 180° dipole flipping procedure, the dipole moment first rotates 71° to adjacent states followed by a 109° rotation to the final 180° state.

AB - Bi0.9Pb0.1FeO3 (BPFO) films were grown on SrRuO3 (SRO)/SrTiO3 (STO) substrates. The surface morphology of BPFO films is highly dependent on that of the SRO layer. Though the step height of STO (100) substrate is equal to one unit cell of STO crystal, the height and width of steps on the surface of SRO and BPFO are larger, which supports a step bunching growth mode on both the SRO layer and BPFO films. At zero bias voltage, the BPFO film exhibits a natural dipole polarization toward the SRO layer, which is believed to be due to the negative charge accumulation at the BPFO/SRO interface, and manifests of 71° and 109° but 180° domain walls. Doping of Pb distorted the BPFO crystal lattice to near cubic that weakens the electric anisotropy and forms a two-step flipping process. To complete a 180° dipole flipping procedure, the dipole moment first rotates 71° to adjacent states followed by a 109° rotation to the final 180° state.

UR - http://www.scopus.com/inward/record.url?scp=84877749934&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84877749934&partnerID=8YFLogxK

U2 - 10.1063/1.4795846

DO - 10.1063/1.4795846

M3 - Article

AN - SCOPUS:84877749934

VL - 113

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 17

M1 - 17D914

ER -