TY - JOUR
T1 - The film growth and electrochemical properties of rf-sputtered LiCoO2 thin films
AU - Liao, Cheng Lung
AU - Lee, Yueh Hsun
AU - Fung, Kuan Zong
N1 - Funding Information:
This work was supported under the grant No. NSC94-2120-M-006-002 by National Science Council (NSC), Taiwan.
PY - 2007/6/14
Y1 - 2007/6/14
N2 - In this work, the effect of various sputtering parameters (such as working pressure, O2 fraction, and rf power) on the film growth of HT-LiCoO2 on Pt-coated silicon were investigated. The as-deposited films and annealed films show crystalline HT-LiCoO2 single phase with (1 0 4) preferred orientation under various sputtering parameters. From ICP results, it was observed that the sputtering parameters and annealing process affected the compositions of the films obviously. The annealing process enhanced the crystallinity of HT-LiCoO2 films. They showed difference in crystallinity and resulted in the variation of Li+ diffusion coefficient that was measured and estimated by slow-scan-rate cyclic voltammetry (SSCV) and galvanostatic intermittent titration technique (GITT) techniques. The charge/discharge tests indicated that films exhibit higher DL i+ showed better rate capability.
AB - In this work, the effect of various sputtering parameters (such as working pressure, O2 fraction, and rf power) on the film growth of HT-LiCoO2 on Pt-coated silicon were investigated. The as-deposited films and annealed films show crystalline HT-LiCoO2 single phase with (1 0 4) preferred orientation under various sputtering parameters. From ICP results, it was observed that the sputtering parameters and annealing process affected the compositions of the films obviously. The annealing process enhanced the crystallinity of HT-LiCoO2 films. They showed difference in crystallinity and resulted in the variation of Li+ diffusion coefficient that was measured and estimated by slow-scan-rate cyclic voltammetry (SSCV) and galvanostatic intermittent titration technique (GITT) techniques. The charge/discharge tests indicated that films exhibit higher DL i+ showed better rate capability.
UR - http://www.scopus.com/inward/record.url?scp=34047253418&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34047253418&partnerID=8YFLogxK
U2 - 10.1016/j.jallcom.2006.07.033
DO - 10.1016/j.jallcom.2006.07.033
M3 - Article
AN - SCOPUS:34047253418
VL - 436
SP - 303
EP - 308
JO - Journal of the Less-Common Metals
JF - Journal of the Less-Common Metals
SN - 0925-8388
IS - 1-2
ER -