The formation of a SiOx interfacial layer on low-k SiOCH materials fabricated in ULSI application

C. H. Huang; N. F. Wang; Y. Z. Tsai; C. C. Liu; C. I. Hung; M. P. Houng

doi:10.1016/j.matchemphys.2008.02.023

The formation of a SiO_x interfacial layer on low-k SiOCH materials fabricated in ULSI application

C. H. Huang, N. F. Wang, Y. Z. Tsai, C. C. Liu, C. I. Hung, M. P. Houng

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The characterizations of SiOCH films using oxygen plasma treatment depends linearly on the O₂/CO flow rate ratio. According to the results of Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) analyses, it was found that the carbon composition decreases with increasing O₂/CO flow rate ratio, because more carbon in the Si-O-C and Si-CH₃ bonds on the film surface would be converted by oxygen radicals. It was believed that the oxygen plasma could oxidize the SiOCH films and form a SiO_x interfacial capping layer without much porosity. Moreover, the result of FTIR analysis revealed that there was no water absorbed on the film. A SiO₂-like capping layer formed at the SiOCH film by the O₂/CO flow rate ratio of 0.75 had nearly the same dielectric properties from the result of capacitance-voltage (C-V) measurement in our research.

Original language	English
Pages (from-to)	299-302
Number of pages	4
Journal	Materials Chemistry and Physics
Volume	110
Issue number	2-3
DOIs	https://doi.org/10.1016/j.matchemphys.2008.02.023
Publication status	Published - 2008 Aug 15

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics

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10.1016/j.matchemphys.2008.02.023

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title = "The formation of a SiOx interfacial layer on low-k SiOCH materials fabricated in ULSI application",

abstract = "The characterizations of SiOCH films using oxygen plasma treatment depends linearly on the O2/CO flow rate ratio. According to the results of Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) analyses, it was found that the carbon composition decreases with increasing O2/CO flow rate ratio, because more carbon in the Si-O-C and Si-CH3 bonds on the film surface would be converted by oxygen radicals. It was believed that the oxygen plasma could oxidize the SiOCH films and form a SiOx interfacial capping layer without much porosity. Moreover, the result of FTIR analysis revealed that there was no water absorbed on the film. A SiO2-like capping layer formed at the SiOCH film by the O2/CO flow rate ratio of 0.75 had nearly the same dielectric properties from the result of capacitance-voltage (C-V) measurement in our research.",

author = "Huang, {C. H.} and Wang, {N. F.} and Tsai, {Y. Z.} and Liu, {C. C.} and Hung, {C. I.} and Houng, {M. P.}",

note = "Funding Information: The work was supported by the National Science Council of the Republic of China under contract number of NSC 96-2221-E-006-082-MY2. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2008",

month = aug,

day = "15",

doi = "10.1016/j.matchemphys.2008.02.023",

language = "English",

volume = "110",

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journal = "Materials Chemistry and Physics",

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T1 - The formation of a SiOx interfacial layer on low-k SiOCH materials fabricated in ULSI application

AU - Huang, C. H.

AU - Wang, N. F.

AU - Tsai, Y. Z.

AU - Liu, C. C.

AU - Hung, C. I.

AU - Houng, M. P.

N1 - Funding Information: The work was supported by the National Science Council of the Republic of China under contract number of NSC 96-2221-E-006-082-MY2. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2008/8/15

Y1 - 2008/8/15

N2 - The characterizations of SiOCH films using oxygen plasma treatment depends linearly on the O2/CO flow rate ratio. According to the results of Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) analyses, it was found that the carbon composition decreases with increasing O2/CO flow rate ratio, because more carbon in the Si-O-C and Si-CH3 bonds on the film surface would be converted by oxygen radicals. It was believed that the oxygen plasma could oxidize the SiOCH films and form a SiOx interfacial capping layer without much porosity. Moreover, the result of FTIR analysis revealed that there was no water absorbed on the film. A SiO2-like capping layer formed at the SiOCH film by the O2/CO flow rate ratio of 0.75 had nearly the same dielectric properties from the result of capacitance-voltage (C-V) measurement in our research.

AB - The characterizations of SiOCH films using oxygen plasma treatment depends linearly on the O2/CO flow rate ratio. According to the results of Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) analyses, it was found that the carbon composition decreases with increasing O2/CO flow rate ratio, because more carbon in the Si-O-C and Si-CH3 bonds on the film surface would be converted by oxygen radicals. It was believed that the oxygen plasma could oxidize the SiOCH films and form a SiOx interfacial capping layer without much porosity. Moreover, the result of FTIR analysis revealed that there was no water absorbed on the film. A SiO2-like capping layer formed at the SiOCH film by the O2/CO flow rate ratio of 0.75 had nearly the same dielectric properties from the result of capacitance-voltage (C-V) measurement in our research.

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The formation of a SiO_x interfacial layer on low-k SiOCH materials fabricated in ULSI application

Abstract

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