In addition to the regular oval defect, two grotesque features, named pyramidal and ellipsoidal shaped defects, have been observed on MBE-grown GaAs layers. Those grotesque defects were demonstrated to have come from a foreign contamination of the Ga source. A method for reducing those defects is also proposed.
|Number of pages||2|
|Journal||Japanese Journal of Applied Physics|
|Publication status||Published - 1987 May|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)