The grotesques of oval defects on the mbe-grown gaas layers

Y. C. Chou, C. T. Lee

Research output: Contribution to journalArticle

Abstract

In addition to the regular oval defect, two grotesque features, named pyramidal and ellipsoidal shaped defects, have been observed on MBE-grown GaAs layers. Those grotesque defects were demonstrated to have come from a foreign contamination of the Ga source. A method for reducing those defects is also proposed.

Original languageEnglish
Pages (from-to)774-775
Number of pages2
JournalJapanese Journal of Applied Physics
Volume26
Issue number5R
Publication statusPublished - 1987 May

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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