Abstract
In this study, the formation of CuInSe2 is based on the Cu/In alloy and selenization processes. First of all, the Cu and In layers is formed by the Bi-layer, Multi-layer and the Co-sputter sputtering processes, respectively. Then annealing process of Cu and In layers is carried out to form the Cu/In alloy, And the CuInSe2 thin film is formed through the selenization heat treatment of this Cu/In alloy. The selenization heat treatment is processed with Se powder inside vacuum quartz tube to form the CuInSe2 absorption layer. Among above three different sputtering processes, the best preparation of Cu/In alloy is carried out through the Co-sputter process with 150°C annealing, and then processed through 550°C selenization leading to the best formation of CuInSe2. This CuInSe2 absorption layer obtained by Co-sputter method under above processes has better performance, its XRD analysis diagram shows that the growth direction of crystal structure in CuInSe2 providing better intensity and less secondary phase of CuxSey and InxSey.
| Original language | English |
|---|---|
| Title of host publication | Proceedings - 2014 International Symposium on Computer, Consumer and Control, IS3C 2014 |
| Publisher | IEEE Computer Society |
| Pages | 581-584 |
| Number of pages | 4 |
| ISBN (Print) | 9781479952779 |
| DOIs | |
| Publication status | Published - 2014 |
| Event | 2nd International Symposium on Computer, Consumer and Control, IS3C 2014 - Taichung, Taiwan Duration: 2014 Jun 10 → 2014 Jun 12 |
Other
| Other | 2nd International Symposium on Computer, Consumer and Control, IS3C 2014 |
|---|---|
| Country | Taiwan |
| City | Taichung |
| Period | 14-06-10 → 14-06-12 |
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All Science Journal Classification (ASJC) codes
- Computer Science Applications
- Control and Systems Engineering
Cite this
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The growth and analyses of CuInSe2 absorption layer for a CIS thin film solar cell. / Wong, King Leung; Chen, Wen-Lih; Chen, Hung En.
Proceedings - 2014 International Symposium on Computer, Consumer and Control, IS3C 2014. IEEE Computer Society, 2014. p. 581-584 6845950.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - The growth and analyses of CuInSe2 absorption layer for a CIS thin film solar cell
AU - Wong, King Leung
AU - Chen, Wen-Lih
AU - Chen, Hung En
PY - 2014
Y1 - 2014
N2 - In this study, the formation of CuInSe2 is based on the Cu/In alloy and selenization processes. First of all, the Cu and In layers is formed by the Bi-layer, Multi-layer and the Co-sputter sputtering processes, respectively. Then annealing process of Cu and In layers is carried out to form the Cu/In alloy, And the CuInSe2 thin film is formed through the selenization heat treatment of this Cu/In alloy. The selenization heat treatment is processed with Se powder inside vacuum quartz tube to form the CuInSe2 absorption layer. Among above three different sputtering processes, the best preparation of Cu/In alloy is carried out through the Co-sputter process with 150°C annealing, and then processed through 550°C selenization leading to the best formation of CuInSe2. This CuInSe2 absorption layer obtained by Co-sputter method under above processes has better performance, its XRD analysis diagram shows that the growth direction of crystal structure in CuInSe2 providing better intensity and less secondary phase of CuxSey and InxSey.
AB - In this study, the formation of CuInSe2 is based on the Cu/In alloy and selenization processes. First of all, the Cu and In layers is formed by the Bi-layer, Multi-layer and the Co-sputter sputtering processes, respectively. Then annealing process of Cu and In layers is carried out to form the Cu/In alloy, And the CuInSe2 thin film is formed through the selenization heat treatment of this Cu/In alloy. The selenization heat treatment is processed with Se powder inside vacuum quartz tube to form the CuInSe2 absorption layer. Among above three different sputtering processes, the best preparation of Cu/In alloy is carried out through the Co-sputter process with 150°C annealing, and then processed through 550°C selenization leading to the best formation of CuInSe2. This CuInSe2 absorption layer obtained by Co-sputter method under above processes has better performance, its XRD analysis diagram shows that the growth direction of crystal structure in CuInSe2 providing better intensity and less secondary phase of CuxSey and InxSey.
UR - http://www.scopus.com/inward/record.url?scp=84904419887&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84904419887&partnerID=8YFLogxK
U2 - 10.1109/IS3C.2014.158
DO - 10.1109/IS3C.2014.158
M3 - Conference contribution
SN - 9781479952779
SP - 581
EP - 584
BT - Proceedings - 2014 International Symposium on Computer, Consumer and Control, IS3C 2014
PB - IEEE Computer Society
ER -