TY - JOUR
T1 - The growth of AZO nanostructures with high doping concentration using vertical reaction layer synthesizing method and their applications
AU - Tang, Jian Fu
AU - Lu, Yang Ming
AU - Chu, Sheng Yuan
N1 - Funding Information:
This research is supported by the Ministry of Science and Technology of Taiwan ( 102-2221-E-006-216-MY3 , 102-2221-E-006-186-MY3 ) and Mr. Shyue-Yen Yau (National Cheng Kung University, Taiwan) for the TEM experimentation during the preparation of this paper.
Publisher Copyright:
© 2015 Elsevier B.V.
PY - 2016/3/31
Y1 - 2016/3/31
N2 - This study developed a hybrid nanostructure comprising zinc oxide (ZnO) nanorods and aluminium doped ZnO (AZO) nanowalls using a chemical bath deposition method for use in near-ultraviolet (NUV) photosensors. We report on a means of tuning the morphology of ZnO nanostructure using Al thin film as a doping source. An increase in the thickness of the Al thin film causes the evolution of the morphology from nanorods to nanowalls. X-ray photoelectron spectroscopy (XPS) data indicate an increase in the concentration of Al doping from 0 to 9.59 wt.%. Transmission electron microscopy indicates that the ZnO nanorods are single-crystal formations whereas the AZO nanowalls are composed of numerous single-crystal grains. UV-vis absorption spectra revealed a new area of absorption resulting from the AZO nanostructure. The resulting photosensor was tested using a 405 nm light-emitting diode (LED) at a voltage bias of 1 V across the device, wherein a photocurrent-to-dark-current ratio of 99.5 was observed. Our results demonstrate that the low-temperature fabrication of near-UV photosensors using a novel structure comprising nanorods and nanowalls is a feasible and effective approach.
AB - This study developed a hybrid nanostructure comprising zinc oxide (ZnO) nanorods and aluminium doped ZnO (AZO) nanowalls using a chemical bath deposition method for use in near-ultraviolet (NUV) photosensors. We report on a means of tuning the morphology of ZnO nanostructure using Al thin film as a doping source. An increase in the thickness of the Al thin film causes the evolution of the morphology from nanorods to nanowalls. X-ray photoelectron spectroscopy (XPS) data indicate an increase in the concentration of Al doping from 0 to 9.59 wt.%. Transmission electron microscopy indicates that the ZnO nanorods are single-crystal formations whereas the AZO nanowalls are composed of numerous single-crystal grains. UV-vis absorption spectra revealed a new area of absorption resulting from the AZO nanostructure. The resulting photosensor was tested using a 405 nm light-emitting diode (LED) at a voltage bias of 1 V across the device, wherein a photocurrent-to-dark-current ratio of 99.5 was observed. Our results demonstrate that the low-temperature fabrication of near-UV photosensors using a novel structure comprising nanorods and nanowalls is a feasible and effective approach.
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U2 - 10.1016/j.snb.2015.11.068
DO - 10.1016/j.snb.2015.11.068
M3 - Article
AN - SCOPUS:84948431745
VL - 225
SP - 327
EP - 333
JO - Sensors and Actuators B: Chemical
JF - Sensors and Actuators B: Chemical
SN - 0925-4005
ER -