The Growth of Diamond Film by Halogenated Methane

Franklin Chau Nan Hong, Gou Tsau Liang, Dawson Chang, Shu Cheng Yu

Research output: Chapter in Book/Report/Conference proceedingChapter

7 Citations (Scopus)

Abstract

Diamond film was grown by hot-filament chemical vapor deposition method. Carbon-halogen bond is much weaker than carbon-hydrogen bond. Therefore, carbon-halogen bond breaks easily at hot filament, and the halogen atoms produced will further induce reactions to generate hydrogen atoms to facilitate diamond film growth. The growth of high quality diamond film by CCl4/H2 mixture was succeeded. Faster nucleation rates of diamond film were observed by CH2C12 than those by CH4. The reaction mechanism will be discussed by camparing the results between CH4, CH2Cl2, CHCl3 and CCl4. They suggest that the active precursors for diamond growth are probably methyl radicals.

Original languageEnglish
Title of host publicationMaterials Science Monographs
Pages577-582
Number of pages6
EditionC
DOIs
Publication statusPublished - 1991 Jan 1

Publication series

NameMaterials Science Monographs
NumberC
Volume73
ISSN (Print)0166-6010

All Science Journal Classification (ASJC) codes

  • Metals and Alloys

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