The Growth of Diamond Film by Halogenated Methane

Franklin Chau Nan Hong; Gou Tsau Liang; Dawson Chang; Shu Cheng Yu

doi:10.1016/B978-0-444-89162-4.50094-4

The Growth of Diamond Film by Halogenated Methane

Franklin Chau Nan Hong, Gou Tsau Liang, Dawson Chang, Shu Cheng Yu

Department of Chemical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Chapter

7 Citations (Scopus)

Abstract

Diamond film was grown by hot-filament chemical vapor deposition method. Carbon-halogen bond is much weaker than carbon-hydrogen bond. Therefore, carbon-halogen bond breaks easily at hot filament, and the halogen atoms produced will further induce reactions to generate hydrogen atoms to facilitate diamond film growth. The growth of high quality diamond film by CCl₄/H₂ mixture was succeeded. Faster nucleation rates of diamond film were observed by CH₂C1₂ than those by CH₄. The reaction mechanism will be discussed by camparing the results between CH₄, CH₂Cl₂, CHCl₃ and CCl₄. They suggest that the active precursors for diamond growth are probably methyl radicals.

Original language	English
Title of host publication	Materials Science Monographs
Pages	577-582
Number of pages	6
Edition	C
DOIs	https://doi.org/10.1016/B978-0-444-89162-4.50094-4
Publication status	Published - 1991 Jan 1

Publication series

Name	Materials Science Monographs
Number	C
Volume	73
ISSN (Print)	0166-6010

All Science Journal Classification (ASJC) codes

Metals and Alloys

Access to Document

10.1016/B978-0-444-89162-4.50094-4

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abstract = "Diamond film was grown by hot-filament chemical vapor deposition method. Carbon-halogen bond is much weaker than carbon-hydrogen bond. Therefore, carbon-halogen bond breaks easily at hot filament, and the halogen atoms produced will further induce reactions to generate hydrogen atoms to facilitate diamond film growth. The growth of high quality diamond film by CCl4/H2 mixture was succeeded. Faster nucleation rates of diamond film were observed by CH2C12 than those by CH4. The reaction mechanism will be discussed by camparing the results between CH4, CH2Cl2, CHCl3 and CCl4. They suggest that the active precursors for diamond growth are probably methyl radicals.",

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AB - Diamond film was grown by hot-filament chemical vapor deposition method. Carbon-halogen bond is much weaker than carbon-hydrogen bond. Therefore, carbon-halogen bond breaks easily at hot filament, and the halogen atoms produced will further induce reactions to generate hydrogen atoms to facilitate diamond film growth. The growth of high quality diamond film by CCl4/H2 mixture was succeeded. Faster nucleation rates of diamond film were observed by CH2C12 than those by CH4. The reaction mechanism will be discussed by camparing the results between CH4, CH2Cl2, CHCl3 and CCl4. They suggest that the active precursors for diamond growth are probably methyl radicals.

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