The heterostructure and electrical properties of Sb2Se3/Bi2Se3 grown by molecular beam epitaxy

You Jyun Chen, Ya Chen Jhong, Pei Yu Chuang, Cheong Wei Chong, Jung Chun Andrew Huang, Vyacheslav Marchenkov, Hsieh Cheng Han

Research output: Contribution to journalArticle

Abstract

We report the growth and characterization of Sb2Se3/Bi2Se3 bilayer films fabricated by molecular beam epitaxy. High quality heterostructures are obtained as evidenced from the X-ray diffraction (XRD), atomic force microscopy and high-resolution transmission electron microscopic (HRTEM) analysis. Interestingly, Sb2Se3 grows as a (120) hexacrystal film in orthorhombic phase on rhombohedral Bi2Se3 (0001) plane, as verified by the out-of-plane and in-plane XRD scans. The cross-sectional TEM studies indicate a sharp interface between Sb2Se3 and Bi2Se3, which is important for the protection of surface states Bi2Se3. The ultraviolet photoelectron spectroscopy indicates that the Fermi level located 0.95 eV above the valence band maximum in Sb2Se3. The insulating nature of Sb2Se3 is confirmed by the nonlinear current-voltage curve via the vertical junction electrical measurement. By four point probe measurements, we confirm the charge transfer effect from Sb2Se3 into Bi2Se3, and such effect can be reduced in the Sb2Se3/(Bi0.7Sb0.3)2Se3 bilayer. This work opens a new avenue for the synthesis of multilayers consisting of topological insulators and ordinary insulator, which is important for harvesting of the multiple surface states for advanced electronic and spintronic applications.

Original languageEnglish
Pages (from-to)65-71
Number of pages7
JournalChinese Journal of Physics
Volume62
DOIs
Publication statusPublished - 2019 Dec

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molecular beam epitaxy
electrical properties
insulators
ultraviolet spectroscopy
diffraction
electrical measurement
x rays
charge transfer
photoelectron spectroscopy
atomic force microscopy
valence
transmission electron microscopy
probes
high resolution
electric potential
curves
synthesis
electronics
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Chen, You Jyun ; Jhong, Ya Chen ; Chuang, Pei Yu ; Chong, Cheong Wei ; Huang, Jung Chun Andrew ; Marchenkov, Vyacheslav ; Han, Hsieh Cheng. / The heterostructure and electrical properties of Sb2Se3/Bi2Se3 grown by molecular beam epitaxy. In: Chinese Journal of Physics. 2019 ; Vol. 62. pp. 65-71.
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The heterostructure and electrical properties of Sb2Se3/Bi2Se3 grown by molecular beam epitaxy. / Chen, You Jyun; Jhong, Ya Chen; Chuang, Pei Yu; Chong, Cheong Wei; Huang, Jung Chun Andrew; Marchenkov, Vyacheslav; Han, Hsieh Cheng.

In: Chinese Journal of Physics, Vol. 62, 12.2019, p. 65-71.

Research output: Contribution to journalArticle

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