TY - JOUR
T1 - The heterostructure and electrical properties of Sb2Se3/Bi2Se3 grown by molecular beam epitaxy
AU - Chen, You Jyun
AU - Jhong, Ya Chen
AU - Chuang, Pei Yu
AU - Chong, Cheong Wei
AU - Huang, Jung Chun Andrew
AU - Marchenkov, Vyacheslav
AU - Han, Hsieh Cheng
N1 - Funding Information:
Prof. Jung-Chun-Andrew Huang is grateful for the research grant from the Ministry of Science and Technology (MOST) of Taiwan under contract numbers 103-2923-M-006-001-MY3 and 104-2119-M-006-018-MY3. The authors acknowledge financial support from the Top-Notch Project under the Headquarter of University Advancement at National Cheng Kung University, which is sponsored by the Ministry of Education, Taiwan. Prof. J. C. A. Huang and Dr. C. W. Chong contributed to the conception and design of the research and experiment. Y. J. Chen and Y. C. Jhong carried out films’ preparation and characterization. Dr. P. Y. Chuang and Dr. H. C. Han help with experimental measurements. Prof. V. V. Marchenkov contributed to the sample preparation and paper discussions. Y. J. Chen and Dr. C. W. Chong analyzed data and wrote the manuscript with the assistance of Prof. J. C. A. Huang. All authors reviewed the manuscript.
Funding Information:
Prof. Jung-Chun-Andrew Huang is grateful for the research grant from the Ministry of Science and Technology (MOST) of Taiwan under contract numbers 103-2923-M-006-001-MY3 and 104-2119-M-006-018-MY3 . The authors acknowledge financial support from the Top-Notch Project under the Headquarter of University Advancement at National Cheng Kung University , which is sponsored by the Ministry of Education , Taiwan.
Publisher Copyright:
© 2019
PY - 2019/12
Y1 - 2019/12
N2 - We report the growth and characterization of Sb2Se3/Bi2Se3 bilayer films fabricated by molecular beam epitaxy. High quality heterostructures are obtained as evidenced from the X-ray diffraction (XRD), atomic force microscopy and high-resolution transmission electron microscopic (HRTEM) analysis. Interestingly, Sb2Se3 grows as a (120) hexacrystal film in orthorhombic phase on rhombohedral Bi2Se3 (0001) plane, as verified by the out-of-plane and in-plane XRD scans. The cross-sectional TEM studies indicate a sharp interface between Sb2Se3 and Bi2Se3, which is important for the protection of surface states Bi2Se3. The ultraviolet photoelectron spectroscopy indicates that the Fermi level located 0.95 eV above the valence band maximum in Sb2Se3. The insulating nature of Sb2Se3 is confirmed by the nonlinear current-voltage curve via the vertical junction electrical measurement. By four point probe measurements, we confirm the charge transfer effect from Sb2Se3 into Bi2Se3, and such effect can be reduced in the Sb2Se3/(Bi0.7Sb0.3)2Se3 bilayer. This work opens a new avenue for the synthesis of multilayers consisting of topological insulators and ordinary insulator, which is important for harvesting of the multiple surface states for advanced electronic and spintronic applications.
AB - We report the growth and characterization of Sb2Se3/Bi2Se3 bilayer films fabricated by molecular beam epitaxy. High quality heterostructures are obtained as evidenced from the X-ray diffraction (XRD), atomic force microscopy and high-resolution transmission electron microscopic (HRTEM) analysis. Interestingly, Sb2Se3 grows as a (120) hexacrystal film in orthorhombic phase on rhombohedral Bi2Se3 (0001) plane, as verified by the out-of-plane and in-plane XRD scans. The cross-sectional TEM studies indicate a sharp interface between Sb2Se3 and Bi2Se3, which is important for the protection of surface states Bi2Se3. The ultraviolet photoelectron spectroscopy indicates that the Fermi level located 0.95 eV above the valence band maximum in Sb2Se3. The insulating nature of Sb2Se3 is confirmed by the nonlinear current-voltage curve via the vertical junction electrical measurement. By four point probe measurements, we confirm the charge transfer effect from Sb2Se3 into Bi2Se3, and such effect can be reduced in the Sb2Se3/(Bi0.7Sb0.3)2Se3 bilayer. This work opens a new avenue for the synthesis of multilayers consisting of topological insulators and ordinary insulator, which is important for harvesting of the multiple surface states for advanced electronic and spintronic applications.
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U2 - 10.1016/j.cjph.2019.07.002
DO - 10.1016/j.cjph.2019.07.002
M3 - Article
AN - SCOPUS:85073378345
SN - 0577-9073
VL - 62
SP - 65
EP - 71
JO - Chinese Journal of Physics
JF - Chinese Journal of Physics
ER -