TY - JOUR
T1 - The hole transport layer with ammonia-modified to improve luminescence efficiency of all-inorganic perovskite light-emitting diodes
AU - Hsieh, Chung Hui
AU - Huang, Chien Hao
AU - Chu, Po Lun
AU - Chu, Sheng Yuan
AU - Chen, Peter
N1 - Funding Information:
This work was financially supported by the Hierarchical Green-Energy Materials (Hi-GEM) Research Center, from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) and the Ministry of Science and Technology ( MOST 109-2634-F-006-020 ) in Taiwan. This research was supported in part by Higher Education Sprout Project, Ministry of Education to the Headquarters of University Advancement at National Cheng Kung University (NCKU). PC thanks the financial support from Ministry of Science and Technology of Taiwan ( MOST 107-2221-E-006 -190 -MY3 , MOST 108-2218-E-006 -043 -MY3 )
Publisher Copyright:
© 2021 Elsevier B.V.
PY - 2022/2
Y1 - 2022/2
N2 - Recently, all-inorganic perovskite CsPbBr3 has been shown to be promising for light-emitting diode applications because of its higher thermal stability and photoluminescence quantum efficiency. However, the performance of all-inorganic perovskite applied to PeLED devices still needs to be further improved. In this paper, a strategy to modify the PEDOT:PSS transport layer with ammonia was successfully developed, and an all-inorganic perovskite light-emitting diode with a ITO/PEDOT:PSS/CsPbBr3/TPBi/LiF/Al structure was fabricated. It is shown that the ammonia-modified PEDOT:PSS not only improved the interfacial energy barrier between the PEDOT:PSS and CsPbBr3 layer which effectively improved the charge injection balance rate and then decreased the turn-on voltage of the proposed devices from 2.6 V to 2.3 V. In addition, the maximum luminance of the devices was increased by 5 times (2540 Cd/m2 to 14025Cd/m2), and both the current efficiency and external quantum efficiency (EQE) were enhanced 2.6 fold (1.61Cd/A to 4.17Cd/A and 0.45%–1.16% respectively). The mechanism was investigated and was found to be due to the enhancement of the peak ratio of the intensity (I(100)/I(110)) of the CsPbBr3 layer, which effectively improved the band edge radiative recombination. The PEDOT:PSS transport layer with ammonia not only lowered the interfacial energy barrier but also improved the morphology and changed the crystallization of the CsPbBr3 layer.
AB - Recently, all-inorganic perovskite CsPbBr3 has been shown to be promising for light-emitting diode applications because of its higher thermal stability and photoluminescence quantum efficiency. However, the performance of all-inorganic perovskite applied to PeLED devices still needs to be further improved. In this paper, a strategy to modify the PEDOT:PSS transport layer with ammonia was successfully developed, and an all-inorganic perovskite light-emitting diode with a ITO/PEDOT:PSS/CsPbBr3/TPBi/LiF/Al structure was fabricated. It is shown that the ammonia-modified PEDOT:PSS not only improved the interfacial energy barrier between the PEDOT:PSS and CsPbBr3 layer which effectively improved the charge injection balance rate and then decreased the turn-on voltage of the proposed devices from 2.6 V to 2.3 V. In addition, the maximum luminance of the devices was increased by 5 times (2540 Cd/m2 to 14025Cd/m2), and both the current efficiency and external quantum efficiency (EQE) were enhanced 2.6 fold (1.61Cd/A to 4.17Cd/A and 0.45%–1.16% respectively). The mechanism was investigated and was found to be due to the enhancement of the peak ratio of the intensity (I(100)/I(110)) of the CsPbBr3 layer, which effectively improved the band edge radiative recombination. The PEDOT:PSS transport layer with ammonia not only lowered the interfacial energy barrier but also improved the morphology and changed the crystallization of the CsPbBr3 layer.
UR - http://www.scopus.com/inward/record.url?scp=85121454543&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85121454543&partnerID=8YFLogxK
U2 - 10.1016/j.orgel.2021.106418
DO - 10.1016/j.orgel.2021.106418
M3 - Article
AN - SCOPUS:85121454543
SN - 1566-1199
VL - 101
JO - Organic Electronics: physics, materials, applications
JF - Organic Electronics: physics, materials, applications
M1 - 106418
ER -