TY - JOUR
T1 - The impact of gate-to-source tunneling current on the characterization of metal-oxide-semiconductor field-effect transistor's hot-carrier reliability
AU - Chen, Jone F.
AU - Tsao, Chih Pin
AU - Ong, T. C.
PY - 2003/4
Y1 - 2003/4
N2 - Drain current (Id) degradation due to Fowler-Nordheim (FN) stress and Vg = Vd stress were investigated in 0.15 μm n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) and p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs). When pMOSFETs reach the lifetime under Vg = Vd stress, the damage resulting from gate-to-source tunneling current is not negligible in comparison with the damage caused by channel hot carriers. Id degradation models of pMOSFETs under FN stress and Vg = Vd stress were established. According to the Id degradation models, the impact of gate-to-source tunneling current on the result of hot-carrier reliability testing is discussed.
AB - Drain current (Id) degradation due to Fowler-Nordheim (FN) stress and Vg = Vd stress were investigated in 0.15 μm n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) and p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs). When pMOSFETs reach the lifetime under Vg = Vd stress, the damage resulting from gate-to-source tunneling current is not negligible in comparison with the damage caused by channel hot carriers. Id degradation models of pMOSFETs under FN stress and Vg = Vd stress were established. According to the Id degradation models, the impact of gate-to-source tunneling current on the result of hot-carrier reliability testing is discussed.
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U2 - 10.1143/jjap.42.2149
DO - 10.1143/jjap.42.2149
M3 - Article
AN - SCOPUS:0038686444
SN - 0021-4922
VL - 42
SP - 2149
EP - 2151
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 4 B
ER -