The impact of ultraviolet light on the switching characteristics of NiO resistive random-access memory (ReRAM) devices

Ricky W. Chuang, Ming Cheng Huang, You Kui Hu, Zhe Ya Zheng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In recent years many research groups have delved into the research and development of Resistive Random-Access Memory (ReRAM) which has the combined advantages of fast read/write speed, simplicity in structure, small device size and density, low activation bias voltage, low power consumption, allowably many periodic operating cycles and nonvolatile memory feature. In order to operate RRAM in an ultraviolet (UV) spectroscopic regime, the spectral transparency of electrodes and reliable device performance are keys to ensuring its continual applicability. Among the materials considered, nickel oxide (NiO) potentially has a broad perspective in optical applications due to their relatively wide bandgap, high mobility, high transparency, remarkably good electrical and optical characteristics. It is foreseeable in the future that the unique applicability of RRAM in UV will make its headway as a key component in many optoelectronic displaying products. The present study focuses on using Radio Frequency Magnetron Sputtering method to prepare NiO active layer and indium tin oxide (ITO) top electrode for the realization of RRAM devices and their current-voltage (I-V) and capacitance-voltage (C-V) characteristics are subsequently evaluated with and without the irradiation of ultraviolet light. Specifically, a series of reliability tests show that the fabricated memories have endured up to 100 switching cycles and the current contrast ratio between high (HRS) and low (LRS) resistance state at 0.1V has achieved more than two orders of magnitude. Furthermore, the retention time measurement has also demonstrated that the memory storage capability of these RRAMs remains in excellent operating condition after surviving more than 10,000 seconds of the test. Major attention is concentrated on finding out a correlation between the UV responsivity and switching characteristics for NiO RRAMs biased at low voltage. We found that the memory states associated with the RRAM of the smallest feature sizes could be toggled relatively easily by UV irradiation at the smallest size.

Original languageEnglish
Title of host publicationIntegrated Optics
Subtitle of host publicationDevices, Materials, and Technologies XXIV
EditorsSonia M. Garcia-Blanco, Pavel Cheben
PublisherSPIE
ISBN (Electronic)9781510633292
DOIs
Publication statusPublished - 2020 Jan 1
EventIntegrated Optics: Devices, Materials, and Technologies XXIV 2020 - San Francisco, United States
Duration: 2020 Feb 32020 Feb 6

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume11283
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceIntegrated Optics: Devices, Materials, and Technologies XXIV 2020
CountryUnited States
CitySan Francisco
Period20-02-0320-02-06

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'The impact of ultraviolet light on the switching characteristics of NiO resistive random-access memory (ReRAM) devices'. Together they form a unique fingerprint.

Cite this