The improvement in modulation speed of GaN-based green light-emitting diode (LED) by use of n-type barrier doping for plastic optical fiber (POF) communication

J. W. Shi; H. Y. Huang; J. K. Sheu; C. H. Chen; Y. S. Wu; W. C. Lai

doi:10.1109/LPT.2006.879526

The improvement in modulation speed of GaN-based green light-emitting diode (LED) by use of n-type barrier doping for plastic optical fiber (POF) communication

J. W. Shi, H. Y. Huang, J. K. Sheu, C. H. Chen, Y. S. Wu, W. C. Lai

Department of Photonics

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

We demonstrate a high-speed GaN-based light-emitting diode at a wavelength of around 500 nm for the application to plastic optical fiber communication. By use of the n-type doping in the GaN barrier layers of the In_x Ga _1-xN-GaN-based multiple-quantum- well (MQW), superior performance of modulation-speed (120 versus 40 MHz) and output power to the undoped control under the same bias current has been observed. According to the measured electrical-to-optical bandwidths and extracted RC-limited bandwidths of both devices, the superior speed performance can be attributed to higher electron/hole radiative recombination rate in the n-doped MQW than that of undoped MQW.

Original language	English
Pages (from-to)	1636-1638
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	18
Issue number	15
DOIs	https://doi.org/10.1109/LPT.2006.879526
Publication status	Published - 2006 Aug 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2006.879526

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title = "The improvement in modulation speed of GaN-based green light-emitting diode (LED) by use of n-type barrier doping for plastic optical fiber (POF) communication",

abstract = "We demonstrate a high-speed GaN-based light-emitting diode at a wavelength of around 500 nm for the application to plastic optical fiber communication. By use of the n-type doping in the GaN barrier layers of the Inx Ga 1-xN-GaN-based multiple-quantum- well (MQW), superior performance of modulation-speed (120 versus 40 MHz) and output power to the undoped control under the same bias current has been observed. According to the measured electrical-to-optical bandwidths and extracted RC-limited bandwidths of both devices, the superior speed performance can be attributed to higher electron/hole radiative recombination rate in the n-doped MQW than that of undoped MQW.",

author = "Shi, {J. W.} and Huang, {H. Y.} and Sheu, {J. K.} and Chen, {C. H.} and Wu, {Y. S.} and Lai, {W. C.}",

note = "Funding Information: Manuscript received January 20, 2006; revised May 9, 2006. This work was sponsored by the National Science Council of Taiwan under Grant NSC-94-2215-E-008-008-.",

year = "2006",

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doi = "10.1109/LPT.2006.879526",

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T1 - The improvement in modulation speed of GaN-based green light-emitting diode (LED) by use of n-type barrier doping for plastic optical fiber (POF) communication

AU - Shi, J. W.

AU - Huang, H. Y.

AU - Sheu, J. K.

AU - Chen, C. H.

AU - Wu, Y. S.

AU - Lai, W. C.

N1 - Funding Information: Manuscript received January 20, 2006; revised May 9, 2006. This work was sponsored by the National Science Council of Taiwan under Grant NSC-94-2215-E-008-008-.

PY - 2006/8/1

Y1 - 2006/8/1

N2 - We demonstrate a high-speed GaN-based light-emitting diode at a wavelength of around 500 nm for the application to plastic optical fiber communication. By use of the n-type doping in the GaN barrier layers of the Inx Ga 1-xN-GaN-based multiple-quantum- well (MQW), superior performance of modulation-speed (120 versus 40 MHz) and output power to the undoped control under the same bias current has been observed. According to the measured electrical-to-optical bandwidths and extracted RC-limited bandwidths of both devices, the superior speed performance can be attributed to higher electron/hole radiative recombination rate in the n-doped MQW than that of undoped MQW.

AB - We demonstrate a high-speed GaN-based light-emitting diode at a wavelength of around 500 nm for the application to plastic optical fiber communication. By use of the n-type doping in the GaN barrier layers of the Inx Ga 1-xN-GaN-based multiple-quantum- well (MQW), superior performance of modulation-speed (120 versus 40 MHz) and output power to the undoped control under the same bias current has been observed. According to the measured electrical-to-optical bandwidths and extracted RC-limited bandwidths of both devices, the superior speed performance can be attributed to higher electron/hole radiative recombination rate in the n-doped MQW than that of undoped MQW.

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The improvement in modulation speed of GaN-based green light-emitting diode (LED) by use of n-type barrier doping for plastic optical fiber (POF) communication

Abstract

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