The improvement in modulation speed of GaN-based green light-emitting diode (LED) by use of n-type barrier doping for plastic optical fiber (POF) communication

J. W. Shi, H. Y. Huang, J. K. Sheu, C. H. Chen, Y. S. Wu, W. C. Lai

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

We demonstrate a high-speed GaN-based light-emitting diode at a wavelength of around 500 nm for the application to plastic optical fiber communication. By use of the n-type doping in the GaN barrier layers of the Inx Ga 1-xN-GaN-based multiple-quantum- well (MQW), superior performance of modulation-speed (120 versus 40 MHz) and output power to the undoped control under the same bias current has been observed. According to the measured electrical-to-optical bandwidths and extracted RC-limited bandwidths of both devices, the superior speed performance can be attributed to higher electron/hole radiative recombination rate in the n-doped MQW than that of undoped MQW.

Original languageEnglish
Pages (from-to)1636-1638
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number15
DOIs
Publication statusPublished - 2006 Aug 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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