The influence of abrasive particle size in copper chemical mechanical planarization

Kuo Hsiu Wei, Yu Sheng Wang, Chuan-Pu Liu, Kei Wei Chen, Ying Lang Wang, Yi Lung Cheng

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

There are many kinds of commercial slurries used in Cu CMP. Major components include an oxidizing agent, complexing agents, inhibitors, and abrasives. We analyze the abrasive particle size by TEM and light scattering. Cu CMP polishing mechanism is also discussed under different particle size distribution. The complexing agent transportation will be the rate determining step when a small abrasive is insufficient, but the copper hydroxide removal rate will determine the overall polishing rate when the amount of smaller particles is enough.

Original languageEnglish
Pages (from-to)543-545
Number of pages3
JournalSurface and Coatings Technology
Volume231
DOIs
Publication statusPublished - 2013 Sep 25

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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