The influence of an MgO nanolayer on the planar Hall effect in NiFe films

Minghua Li, Zhiduo Zhao, Lin Ma, Guoqiang Yu, Xiangan Lu, Jiao Teng, Guanghua Yu, Wenping Zhou, Pedram Khalili Amiri, Kang L. Wang

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


The Planar Hall Effect (PHE) in NiFe films was studied using MgO as the buffer and capping layer to reduce the shunt effect. The thermal annealing was found to be effective in increasing the sensitivity. The sensitivity of the magnetic field reached as high as 865 V/AT in a MgO (3 nm)/NiFe (5 nm)/MgO(3 nm)/Ta(3 nm) structure after annealing at 500 °C for 2 h, which is close to the sensitivity of semiconductor Hall Effect (HE) sensors. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) were used to study the sample. The results show that the top crystallization of MgO and NiFe (111) texture were improved by proper annealing. The smooth and clear bottom MgO/NiFe and top NiFe/MgO interface is evident from our data. In addition, the shunt current of Ta was decreased. These combined factors facilitate the improvement of the sensitivity of the magnetic field.

Original languageEnglish
Article number123908
JournalJournal of Applied Physics
Issue number12
Publication statusPublished - 2015 Mar 28

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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