The influence of dual-carrier recombination and release on electrical characteristics of pentacene-based ambipolar transistors

Liang Yun Chiu, Horng Long Cheng, Wei Yang Chou, Fu Ching Tang

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Abstract

Electrical characteristics of pentacene-based ambipolar organic field-effect transistors (OFETs) are examined and are shown to significantly differ from those of unipolar OFETs. The electrical and hysteresis characteristics of the ambipolar OFETs depend on the applied source-drain bias and sweeping gate voltage range. The ambipolar OFET characteristics, such as charge mobility, subthreshold swing, threshold voltage, and off-current level, are controlled by the dual-carrier recombination and release process, through which opposite-sign charges can capture and release majority charges. This study contributes to advancing the development of more applications based on ambipolar OFETs.

Original languageEnglish
Article number193302
JournalApplied Physics Letters
Volume103
Issue number19
DOIs
Publication statusPublished - 2013 Nov 4

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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