The influence of InAs layer on the negative differential resistance behaviors of the GaSb/AlSb/GaSb/AlSb/InAs double barrier resonant interband tunneling structure

Mau-phon Houng, Yeong-Her Wang, C. L. Shen, J. F. Chen, A. Y. Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The authors have demonstrated a novel resonant interband tunneling device with GaSb/AlSb/InAs/GaSb/AlSb/InAs structures. It is found that InAs well thicknesses have a significant influence on the I-V characteristics of this device. The incorporation of an InAs layer in the well region will promote a peak-to-valley ratio of 20 at 300 K, nearly five times larger than that of the primitive one. Furthermore, multiple negative differential resistance behavior was obtained with InAs well thicknesses were in the range of 120 A to 300 A. Otherwise, single negative resistance is obtained. The significant influence of the added InAs layer on the electrical performance of the corresponding structure is found to be due to the electron-light hole coupling effect.

Original languageEnglish
Title of host publicationInternational Electron Devices Meeting 1991, IEDM 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages817-820
Number of pages4
ISBN (Electronic)0780302435
DOIs
Publication statusPublished - 1991 Jan 1
EventInternational Electron Devices Meeting, IEDM 1991 - Washington, United States
Duration: 1991 Dec 81991 Dec 11

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume1991-January
ISSN (Print)0163-1918

Other

OtherInternational Electron Devices Meeting, IEDM 1991
CountryUnited States
CityWashington
Period91-12-0891-12-11

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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