The influence of oxygen content in the sputtering gas on the self-synthesis of tungsten oxide nanowires on sputter-deposited tungsten films

Chao Hsuing Chen, Shui Jinn Wang, Rong Ming Ko, Yi Cheng Kuo, Kai Ming Uang, Tron Min Chen, Bor Wen Liou, Hao Yi Tsai

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)

Abstract

The self-synthesis of tungsten oxide (W18O49) nanowires on sputter-deposited W films prepared under different O 2/Ar flow rate ratios (OAFRRs) in the sputtering gas is reported. After thermally annealing at 700-850 °C in N2 ambient for 15 min, dense and well crystalline W18O49 (010) nanowires or nanobelts were obtained depending on the oxygen content in the sputtering gas. Experimental results show that the annealing temperature required for the full growth of W18O49 nanowires reduced when the OAFRR in the sputtering gas was increased. It is found that the oxygen absorbed in the surface region is responsible for the growth of nanowires. As the OAFRR was increased to (8 sccm)/(24 sccm), which resulted in a saturated oxygen content of about 55 at.% inside the W film, large-scale nanobelts or nanosheets of W18O49 were grown. The possible growth mechanism which governs the evolution from nanowires to nanobelts as the OAFRR was changed is also discussed.

Original languageEnglish
Pages (from-to)217-223
Number of pages7
JournalNanotechnology
Volume17
Issue number1
DOIs
Publication statusPublished - 2006 Jan 14

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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