The influences of plasma ion bombarded on crystallization, electrical and mechanical properties of Zn-In-Sn-O films

K. J. Chen, F. Y. Hung, S. J. Chang, J. D. Liao, C. C. Weng, Z. S. Hu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The quality of co-sputtering derived Zn-In-Sn-O (ZITO) film was adjusted by different gas (oxygen and argon) induced plasma ions bombarding (PIB) treatment. The result showed that the film conductivity could be improved after plasma bombardment. The increment of oxygen vacancies and plasma bombard-induced thermal energy were main reasons. Notably, the efficiency of Ar plasma bombarded for improved conductivity not only was better but also had a smoother surface morphology. Due to Ar ions will not react with metal atoms to form oxide and possessed a higher momentum. In addition, the O-rich layer on the ultra-surface not only was removed but also enhanced film reliability by plasma bombarded that could enhance the performance of optoelectronic devices.

Original languageEnglish
Pages (from-to)1157-1163
Number of pages7
JournalApplied Surface Science
Volume258
Issue number3
DOIs
Publication statusPublished - 2011 Nov 15

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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