The interdiffusion and the feasibility of Al/Mo/Ni/ (Pb-Sn) as a solder bump system

Kwang Lung Lin, Shin Kuo Chen

Research output: Contribution to journalArticlepeer-review


The feasibility of the Al/Mo/Ni/ (Pb-Sn) as a solder bump system on a silicon wafer was investigated in terms of metals interdiffusion. The interdiffusion study was conducted at 150 °C for up to 900 h. The solder bump structure investigated comprises a 300 or 600 nm Mo film with a fixed thickness of 500 and 200 nm for the Al and Ni films, respectively. The results of Auger electron spectroscopy depth profile and scanning electron microscopy elemental analysis revealed that Mo is valid for retarding the interdiffusion between Al and Pb-Sn. Mo may diffuse outward to the Pb-Sn solder, while Al never penetrates the Mo layer. The interdiffusion occurrences are interpreted in terms of thermodynamical behaviour.

Original languageEnglish
Pages (from-to)218-223
Number of pages6
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 1997 Feb 28

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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