TY - GEN
T1 - The interface microstructure on the reliability of flip-chip laser diode bonding
AU - Liu, Chien Chih
AU - Lin, Yen Kuang
AU - Houng, Mau-phon
AU - Wang, Yeong-Her
PY - 2002/1/1
Y1 - 2002/1/1
N2 - We have successfully developed a fluxless bonding process to manufacture In-Au microjoint between laser diode and silicon substrate, and studied the interface properties and microstructure of In-Au layer. From XRD, SEM and EDX results indicate that AuIn2 is the main intermetallic phase, which plays an important role on the quality of joints. To study the thermal stability, the flip-chip assemblies were then tested by thermal shock and high temperature storage. From the thermal shock test, we can find that high bonding temperature will result in failure mode, such as the occurrence of cracks at the grain boundary. From thermal aging test, no brittle intermetallic phases and fractures were observed in the solder joints. Therefore, the bonding process has to be optimized because the reliability of solder joint strongly depended on the initial microstructure. The optimal bonding temperature is 200°C after thermal shock test and high temperature storage test.
AB - We have successfully developed a fluxless bonding process to manufacture In-Au microjoint between laser diode and silicon substrate, and studied the interface properties and microstructure of In-Au layer. From XRD, SEM and EDX results indicate that AuIn2 is the main intermetallic phase, which plays an important role on the quality of joints. To study the thermal stability, the flip-chip assemblies were then tested by thermal shock and high temperature storage. From the thermal shock test, we can find that high bonding temperature will result in failure mode, such as the occurrence of cracks at the grain boundary. From thermal aging test, no brittle intermetallic phases and fractures were observed in the solder joints. Therefore, the bonding process has to be optimized because the reliability of solder joint strongly depended on the initial microstructure. The optimal bonding temperature is 200°C after thermal shock test and high temperature storage test.
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U2 - 10.1109/EMAP.2002.1188879
DO - 10.1109/EMAP.2002.1188879
M3 - Conference contribution
AN - SCOPUS:84966668349
T3 - Proceedings of the 4th International Symposium on Electronic Materials and Packaging, EMAP 2002
SP - 438
EP - 444
BT - Proceedings of the 4th International Symposium on Electronic Materials and Packaging, EMAP 2002
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 4th International Symposium on Electronic Materials and Packaging, EMAP 2002
Y2 - 4 December 2002 through 6 December 2002
ER -