TY - JOUR
T1 - The interfacial transition of the C/Si composite film and Si substrate evaluated to predict the pop-in behavior in nanoindentation
AU - Han, Chang Fu
AU - Huang, Chao Yu
AU - Wu, Bo Hsiung
AU - Lin, Jen Fin
N1 - Funding Information:
Manuscript received May 11, 2009; revised August 11, 2009; accepted October 12, 2009. Date of publication November 3, 2009; date of current version May 11, 2011. This work was supported by the Frontier Materials and Micro/Nano Science and Technology Center, National Cheng Kung University, Taiwan. The review of this paper was arranged by Associate Editor A. A. Balandin.
Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2011/5
Y1 - 2011/5
N2 - In this study, an analytical model is proposed in order to determine the indentation depth of pop-in appearing in the loading process and investigate the effects of the C-film thickness of the C/a-Si composite film on the parameters of the indentation depth of pop-in, the inclined face angle, and the Si-substrate semiangle shown at the substrate after finishing indentation. This model is developed on the basis of the elastoplastic deformation model for the specimen in combination with the concept of applying a virtual indenter with a variable semiangle to the Si substrate. From good agreement between the predicted value and the experimental result, the present model is proved to be trustworthy in the predictions of the indentation depth of pop-in varying with the C-film thickness. Due to a higher gradient demonstrated in the stress of the composite film and stress of the Si-substrate verse indentation depth, a specimen with a thinner C-film is easier to reach the pop-in as compared to that shown in a thicker C-film. The present model is applicable for hard film/substrate specimen as occurring the pop-in behavior in nanoindentations.
AB - In this study, an analytical model is proposed in order to determine the indentation depth of pop-in appearing in the loading process and investigate the effects of the C-film thickness of the C/a-Si composite film on the parameters of the indentation depth of pop-in, the inclined face angle, and the Si-substrate semiangle shown at the substrate after finishing indentation. This model is developed on the basis of the elastoplastic deformation model for the specimen in combination with the concept of applying a virtual indenter with a variable semiangle to the Si substrate. From good agreement between the predicted value and the experimental result, the present model is proved to be trustworthy in the predictions of the indentation depth of pop-in varying with the C-film thickness. Due to a higher gradient demonstrated in the stress of the composite film and stress of the Si-substrate verse indentation depth, a specimen with a thinner C-film is easier to reach the pop-in as compared to that shown in a thicker C-film. The present model is applicable for hard film/substrate specimen as occurring the pop-in behavior in nanoindentations.
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U2 - 10.1109/TNANO.2009.2035049
DO - 10.1109/TNANO.2009.2035049
M3 - Article
AN - SCOPUS:79955909493
SN - 1536-125X
VL - 10
SP - 363
EP - 370
JO - IEEE Transactions on Nanotechnology
JF - IEEE Transactions on Nanotechnology
IS - 3
M1 - 5308262
ER -