The investigation for In-Ga-Zn-O TFTs with post deposition of in-situ Ar/H2 plasma treatment by atmospheric pressure plasma Jet

Kow Ming Chang, Bo Wen Huang, Chien Hung Wu, Hsin Ying Chen, You Xian Zheng, Ming Chuan Lee, Yu Xin Zhang, Chuang Ju Lin, Yu Hsuan Cheng, Shui Jinn Wang, Jui Mei Hsu, Yu Li Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) was applied for the fabrication of amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). In this work, a-IGZO TFTs fabricated by AP-PECVD technique were firstly treated by post deposition of in-situ Ar/H2 plasma with atmospheric pressure plasma Jet (APPJ). Compared to without plasma treatment, samples with the post in-situ Ar/H2 plasma treatment on IGZO active layer exhibited higher mobility of 20.12 cm2/V·S, VT of 1.11 V, lower subthreshold swing of 93 mV/decade, higher Ion/Ioff of 5.34×107. The excellent IGZO TFTs fabricated by AP-PECVD technique also show highly transparent characteristics.

Original languageEnglish
Title of host publication16th International Conference on Nanotechnology - IEEE NANO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages405-407
Number of pages3
ISBN (Electronic)9781509039142
DOIs
Publication statusPublished - 2016 Nov 21
Event16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
Duration: 2016 Aug 222016 Aug 25

Publication series

Name16th International Conference on Nanotechnology - IEEE NANO 2016

Other

Other16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
CountryJapan
CitySendai
Period16-08-2216-08-25

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Chang, K. M., Huang, B. W., Wu, C. H., Chen, H. Y., Zheng, Y. X., Lee, M. C., Zhang, Y. X., Lin, C. J., Cheng, Y. H., Wang, S. J., Hsu, J. M., & Lin, Y. L. (2016). The investigation for In-Ga-Zn-O TFTs with post deposition of in-situ Ar/H2 plasma treatment by atmospheric pressure plasma Jet. In 16th International Conference on Nanotechnology - IEEE NANO 2016 (pp. 405-407). [7751471] (16th International Conference on Nanotechnology - IEEE NANO 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2016.7751471