Abstract
We present the Schottky performances of Ti/Pt/Au contacts to the wide band gap semiconductor In0.5(Al0.66Ga0.34)0.5P with various surface treatment methods before Schottky metals deposition. To remove the native oxide layer, the In0.5(Al0.66Ga0.34)0.5P surface was treated with the surface treatment using buffer oxide etchant (BOE), diluted HCl and diluted NH4OH, respectively. The performances of associated Schottky diodes compared with samples without surface treatment are improved significantly. Among the various surface treatments, the best Schottky performances with an ideality factor of 1.10, a Schottky barrier height of 1.08 V and a breakdown voltage of -58 V for the InAlGaP surface treated with diluted NH4OH for 30 s was obtained.
| Original language | English |
|---|---|
| Pages (from-to) | 99-102 |
| Number of pages | 4 |
| Journal | Optical Materials |
| Volume | 23 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 2003 Jan 1 |
| Event | Proceedings of the 8th ICEM 2002 - XI'an, China Duration: 2002 Jun 10 → 2002 Jun 14 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Computer Science(all)
- Atomic and Molecular Physics, and Optics
- Spectroscopy
- Physical and Theoretical Chemistry
- Organic Chemistry
- Inorganic Chemistry
- Electrical and Electronic Engineering
Cite this
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The investigation for various treatments of InAlGaP Schottky diodes. / Lee, Hsin Ying; Lee, Ching Ting.
In: Optical Materials, Vol. 23, No. 1-2, 01.01.2003, p. 99-102.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - The investigation for various treatments of InAlGaP Schottky diodes
AU - Lee, Hsin Ying
AU - Lee, Ching Ting
PY - 2003/1/1
Y1 - 2003/1/1
N2 - We present the Schottky performances of Ti/Pt/Au contacts to the wide band gap semiconductor In0.5(Al0.66Ga0.34)0.5P with various surface treatment methods before Schottky metals deposition. To remove the native oxide layer, the In0.5(Al0.66Ga0.34)0.5P surface was treated with the surface treatment using buffer oxide etchant (BOE), diluted HCl and diluted NH4OH, respectively. The performances of associated Schottky diodes compared with samples without surface treatment are improved significantly. Among the various surface treatments, the best Schottky performances with an ideality factor of 1.10, a Schottky barrier height of 1.08 V and a breakdown voltage of -58 V for the InAlGaP surface treated with diluted NH4OH for 30 s was obtained.
AB - We present the Schottky performances of Ti/Pt/Au contacts to the wide band gap semiconductor In0.5(Al0.66Ga0.34)0.5P with various surface treatment methods before Schottky metals deposition. To remove the native oxide layer, the In0.5(Al0.66Ga0.34)0.5P surface was treated with the surface treatment using buffer oxide etchant (BOE), diluted HCl and diluted NH4OH, respectively. The performances of associated Schottky diodes compared with samples without surface treatment are improved significantly. Among the various surface treatments, the best Schottky performances with an ideality factor of 1.10, a Schottky barrier height of 1.08 V and a breakdown voltage of -58 V for the InAlGaP surface treated with diluted NH4OH for 30 s was obtained.
UR - http://www.scopus.com/inward/record.url?scp=0038010619&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0038010619&partnerID=8YFLogxK
U2 - 10.1016/S0925-3467(03)00067-3
DO - 10.1016/S0925-3467(03)00067-3
M3 - Conference article
AN - SCOPUS:0038010619
VL - 23
SP - 99
EP - 102
JO - Optical Materials
JF - Optical Materials
SN - 0925-3467
IS - 1-2
ER -