The investigation for various treatments of InAlGaP Schottky diodes

Hsin Ying Lee; Ching Ting Lee

doi:10.1016/S0925-3467(03)00067-3

The investigation for various treatments of InAlGaP Schottky diodes

Hsin Ying Lee, Ching Ting Lee

Department of Photonics

Research output: Contribution to journal › Conference article › peer-review

8 Citations (Scopus)

Abstract

We present the Schottky performances of Ti/Pt/Au contacts to the wide band gap semiconductor In_0.5(Al_0.66Ga_0.34)_0.5P with various surface treatment methods before Schottky metals deposition. To remove the native oxide layer, the In_0.5(Al_0.66Ga_0.34)_0.5P surface was treated with the surface treatment using buffer oxide etchant (BOE), diluted HCl and diluted NH₄OH, respectively. The performances of associated Schottky diodes compared with samples without surface treatment are improved significantly. Among the various surface treatments, the best Schottky performances with an ideality factor of 1.10, a Schottky barrier height of 1.08 V and a breakdown voltage of -58 V for the InAlGaP surface treated with diluted NH₄OH for 30 s was obtained.

Original language	English
Pages (from-to)	99-102
Number of pages	4
Journal	Optical Materials
Volume	23
Issue number	1-2
DOIs	https://doi.org/10.1016/S0925-3467(03)00067-3
Publication status	Published - 2003 Jan 1
Event	Proceedings of the 8th ICEM 2002 - XI'an, China Duration: 2002 Jun 10 → 2002 Jun 14

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Computer Science(all)
Atomic and Molecular Physics, and Optics
Spectroscopy
Physical and Theoretical Chemistry
Organic Chemistry
Inorganic Chemistry
Electrical and Electronic Engineering

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abstract = "We present the Schottky performances of Ti/Pt/Au contacts to the wide band gap semiconductor In0.5(Al0.66Ga0.34)0.5P with various surface treatment methods before Schottky metals deposition. To remove the native oxide layer, the In0.5(Al0.66Ga0.34)0.5P surface was treated with the surface treatment using buffer oxide etchant (BOE), diluted HCl and diluted NH4OH, respectively. The performances of associated Schottky diodes compared with samples without surface treatment are improved significantly. Among the various surface treatments, the best Schottky performances with an ideality factor of 1.10, a Schottky barrier height of 1.08 V and a breakdown voltage of -58 V for the InAlGaP surface treated with diluted NH4OH for 30 s was obtained.",

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AU - Lee, Hsin Ying

AU - Lee, Ching Ting

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N2 - We present the Schottky performances of Ti/Pt/Au contacts to the wide band gap semiconductor In0.5(Al0.66Ga0.34)0.5P with various surface treatment methods before Schottky metals deposition. To remove the native oxide layer, the In0.5(Al0.66Ga0.34)0.5P surface was treated with the surface treatment using buffer oxide etchant (BOE), diluted HCl and diluted NH4OH, respectively. The performances of associated Schottky diodes compared with samples without surface treatment are improved significantly. Among the various surface treatments, the best Schottky performances with an ideality factor of 1.10, a Schottky barrier height of 1.08 V and a breakdown voltage of -58 V for the InAlGaP surface treated with diluted NH4OH for 30 s was obtained.

AB - We present the Schottky performances of Ti/Pt/Au contacts to the wide band gap semiconductor In0.5(Al0.66Ga0.34)0.5P with various surface treatment methods before Schottky metals deposition. To remove the native oxide layer, the In0.5(Al0.66Ga0.34)0.5P surface was treated with the surface treatment using buffer oxide etchant (BOE), diluted HCl and diluted NH4OH, respectively. The performances of associated Schottky diodes compared with samples without surface treatment are improved significantly. Among the various surface treatments, the best Schottky performances with an ideality factor of 1.10, a Schottky barrier height of 1.08 V and a breakdown voltage of -58 V for the InAlGaP surface treated with diluted NH4OH for 30 s was obtained.

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T2 - Proceedings of the 8th ICEM 2002

Y2 - 10 June 2002 through 14 June 2002

ER -

The investigation for various treatments of InAlGaP Schottky diodes

Abstract

All Science Journal Classification (ASJC) codes

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