The investigation for various treatments of InAlGaP Schottky diodes

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

We present the Schottky performances of Ti/Pt/Au contacts to the wide band gap semiconductor In0.5(Al0.66Ga0.34)0.5P with various surface treatment methods before Schottky metals deposition. To remove the native oxide layer, the In0.5(Al0.66Ga0.34)0.5P surface was treated with the surface treatment using buffer oxide etchant (BOE), diluted HCl and diluted NH4OH, respectively. The performances of associated Schottky diodes compared with samples without surface treatment are improved significantly. Among the various surface treatments, the best Schottky performances with an ideality factor of 1.10, a Schottky barrier height of 1.08 V and a breakdown voltage of -58 V for the InAlGaP surface treated with diluted NH4OH for 30 s was obtained.

Original languageEnglish
Pages (from-to)99-102
Number of pages4
JournalOptical Materials
Volume23
Issue number1-2
DOIs
Publication statusPublished - 2003 Jan 1
EventProceedings of the 8th ICEM 2002 - XI'an, China
Duration: 2002 Jun 102002 Jun 14

Fingerprint

Schottky diodes
surface treatment
Surface treatment
Diodes
Oxides
oxides
etchants
Electric breakdown
electrical faults
electric contacts
Buffers
buffers
Metals
broadband
metals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Computer Science(all)
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering

Cite this

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abstract = "We present the Schottky performances of Ti/Pt/Au contacts to the wide band gap semiconductor In0.5(Al0.66Ga0.34)0.5P with various surface treatment methods before Schottky metals deposition. To remove the native oxide layer, the In0.5(Al0.66Ga0.34)0.5P surface was treated with the surface treatment using buffer oxide etchant (BOE), diluted HCl and diluted NH4OH, respectively. The performances of associated Schottky diodes compared with samples without surface treatment are improved significantly. Among the various surface treatments, the best Schottky performances with an ideality factor of 1.10, a Schottky barrier height of 1.08 V and a breakdown voltage of -58 V for the InAlGaP surface treated with diluted NH4OH for 30 s was obtained.",
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The investigation for various treatments of InAlGaP Schottky diodes. / Lee, Hsin Ying; Lee, Ching Ting.

In: Optical Materials, Vol. 23, No. 1-2, 01.01.2003, p. 99-102.

Research output: Contribution to journalConference article

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