The Investigation of Preferred Orientation Growth of ZnO Films on the Ceramic Substrates

Sheng-Yuan Chu, Te Yi Chen, Walter Water, Tung Yi Huang

Research output: Contribution to journalConference article

Abstract

Poly-crystal ZnO films with c-axis (002) orientation have been successfully grown on the lead-based ceramic substrates by r.f. magnetron sputtering technique. The deposited films were characterized as a function of deposition time and argon-oxygen gas flow ratio. Crystalline structures of the films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). Highly oriented films with c-axis normal to the substrates can be obtained by depositing under a total pressure of 10mTorr containing 50% argon and 50% oxygen and r.f. power of 70W for 3 hours. The phase velocity, electromechanical coupling coefficient and temperature coefficient of frequency of SAW device with ZnO/IDT/PT-ceramic structure were investigated. It shows that the preferred oriented ZnO film is beneficial for improving the electromechanical coupling coefficient of SAW device.

Original languageEnglish
Pages (from-to)95-110
Number of pages16
JournalMaterials Research Society Symposium - Proceedings
Volume764
Publication statusPublished - 2003 Dec 8
EventMATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS: New Applications for Wide-Bandgap Semiconductors - San Francisco, CA, United States
Duration: 2003 Apr 222003 Apr 24

Fingerprint

ceramics
Substrates
Electromechanical coupling
Argon
coupling coefficients
argon
Oxygen
Phase velocity
oxygen
phase velocity
Crystal orientation
Magnetron sputtering
gas flow
Flow of gases
Atomic force microscopy
magnetron sputtering
Lead
atomic force microscopy
Crystalline materials
X ray diffraction

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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title = "The Investigation of Preferred Orientation Growth of ZnO Films on the Ceramic Substrates",
abstract = "Poly-crystal ZnO films with c-axis (002) orientation have been successfully grown on the lead-based ceramic substrates by r.f. magnetron sputtering technique. The deposited films were characterized as a function of deposition time and argon-oxygen gas flow ratio. Crystalline structures of the films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). Highly oriented films with c-axis normal to the substrates can be obtained by depositing under a total pressure of 10mTorr containing 50{\%} argon and 50{\%} oxygen and r.f. power of 70W for 3 hours. The phase velocity, electromechanical coupling coefficient and temperature coefficient of frequency of SAW device with ZnO/IDT/PT-ceramic structure were investigated. It shows that the preferred oriented ZnO film is beneficial for improving the electromechanical coupling coefficient of SAW device.",
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The Investigation of Preferred Orientation Growth of ZnO Films on the Ceramic Substrates. / Chu, Sheng-Yuan; Chen, Te Yi; Water, Walter; Huang, Tung Yi.

In: Materials Research Society Symposium - Proceedings, Vol. 764, 08.12.2003, p. 95-110.

Research output: Contribution to journalConference article

TY - JOUR

T1 - The Investigation of Preferred Orientation Growth of ZnO Films on the Ceramic Substrates

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AB - Poly-crystal ZnO films with c-axis (002) orientation have been successfully grown on the lead-based ceramic substrates by r.f. magnetron sputtering technique. The deposited films were characterized as a function of deposition time and argon-oxygen gas flow ratio. Crystalline structures of the films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). Highly oriented films with c-axis normal to the substrates can be obtained by depositing under a total pressure of 10mTorr containing 50% argon and 50% oxygen and r.f. power of 70W for 3 hours. The phase velocity, electromechanical coupling coefficient and temperature coefficient of frequency of SAW device with ZnO/IDT/PT-ceramic structure were investigated. It shows that the preferred oriented ZnO film is beneficial for improving the electromechanical coupling coefficient of SAW device.

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