Abstract
Poly-crystal ZnO films with c-axis (002) orientation have been successfully grown on the lead-based ceramic substrates by r.f. magnetron sputtering technique. The deposited films were characterized as a function of deposition time and argon-oxygen gas flow ratio. Crystalline structures of the films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). Highly oriented films with c-axis normal to the substrates can be obtained by depositing under a total pressure of 10mTorr containing 50% argon and 50% oxygen and r.f. power of 70W for 3 hours. The phase velocity, electromechanical coupling coefficient and temperature coefficient of frequency of SAW device with ZnO/IDT/PT-ceramic structure were investigated. It shows that the preferred oriented ZnO film is beneficial for improving the electromechanical coupling coefficient of SAW device.
Original language | English |
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Pages (from-to) | 95-110 |
Number of pages | 16 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 764 |
DOIs | |
Publication status | Published - 2003 |
Event | MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS: New Applications for Wide-Bandgap Semiconductors - San Francisco, CA, United States Duration: 2003 Apr 22 → 2003 Apr 24 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering