The investigations of InAs quantum dots overgrown on in 0.1Ga0.9As surfactant layer and 10° off-angle (100) GaAs substrate

Shiang Feng Tang, Min Yu Hsu, Cheng Der Chiang, C. C. Su, Chuan Pu Liu, Yu Ching Fang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

For propose of achieving the high coherent quantum dots or the expected spectral emission, we have proposed the epitaxial method solved by using self-organized grown on the InxGa1-xAs relaxed layer and the mis-orientated GaAs substrates. In this study, using extra slow growth rate of 0.075ML/sec to grow the quantum dot matrix under the temperature of 500°C by the general Riber 32P solid-source MBE system, the high surface density and uniformity in size of two-stacked of quantum dot (QD) matrix have been established. The temperature dependences of the full widths at half-maximum (FWHM) and the positions of photoluminescence (PL) bands are studied experimentally by adding In0.1Ga0.9As surfactant layer and using mis-orientated substrate, respectively. The 3-dimensional QD images using atomic force microscopy (AFM) well agree with the results of above mentioned. Therefore, a systematic estimate is given of the QD structures grown on different epitaxial conditions.

Original languageEnglish
Title of host publicationDevice and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV
DOIs
Publication statusPublished - 2008 Mar 31
EventDevice and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV - Canberra, Australia
Duration: 2007 Dec 52007 Dec 7

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6800
ISSN (Print)0277-786X

Other

OtherDevice and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV
CountryAustralia
CityCanberra
Period07-12-0507-12-07

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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    Tang, S. F., Hsu, M. Y., Chiang, C. D., Su, C. C., Liu, C. P., & Fang, Y. C. (2008). The investigations of InAs quantum dots overgrown on in 0.1Ga0.9As surfactant layer and 10° off-angle (100) GaAs substrate. In Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV [68001E] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6800). https://doi.org/10.1117/12.759448