The investigations of InAs quantum dots overgrown on in 0.1Ga0.9As surfactant layer and 10° off-angle (100) GaAs substrate

Shiang Feng Tang; Min Yu Hsu; Cheng Der Chiang; C. C. Su; Chuan Pu Liu; Yu Ching Fang

doi:10.1117/12.759448

The investigations of InAs quantum dots overgrown on in _0.1Ga_0.9As surfactant layer and 10° off-angle (100) GaAs substrate

Shiang Feng Tang, Min Yu Hsu, Cheng Der Chiang, C. C. Su, Chuan Pu Liu, Yu Ching Fang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

For propose of achieving the high coherent quantum dots or the expected spectral emission, we have proposed the epitaxial method solved by using self-organized grown on the In_xGa_1-xAs relaxed layer and the mis-orientated GaAs substrates. In this study, using extra slow growth rate of 0.075ML/sec to grow the quantum dot matrix under the temperature of 500°C by the general Riber 32P solid-source MBE system, the high surface density and uniformity in size of two-stacked of quantum dot (QD) matrix have been established. The temperature dependences of the full widths at half-maximum (FWHM) and the positions of photoluminescence (PL) bands are studied experimentally by adding In_0.1Ga_0.9As surfactant layer and using mis-orientated substrate, respectively. The 3-dimensional QD images using atomic force microscopy (AFM) well agree with the results of above mentioned. Therefore, a systematic estimate is given of the QD structures grown on different epitaxial conditions.

Original language	English
Title of host publication	Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV
DOIs	https://doi.org/10.1117/12.759448
Publication status	Published - 2008
Event	Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV - Canberra, Australia Duration: 2007 Dec 5 → 2007 Dec 7

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6800
ISSN (Print)	0277-786X

Other

Other	Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV
Country/Territory	Australia
City	Canberra
Period	07-12-05 → 07-12-07

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.759448

Cite this

Tang, S. F., Hsu, M. Y., Chiang, C. D., Su, C. C., Liu, C. P., & Fang, Y. C. (2008). The investigations of InAs quantum dots overgrown on in _0.1Ga_0.9As surfactant layer and 10° off-angle (100) GaAs substrate. In Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV Article 68001E (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6800). https://doi.org/10.1117/12.759448

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title = "The investigations of InAs quantum dots overgrown on in 0.1Ga0.9As surfactant layer and 10° off-angle (100) GaAs substrate",

abstract = "For propose of achieving the high coherent quantum dots or the expected spectral emission, we have proposed the epitaxial method solved by using self-organized grown on the InxGa1-xAs relaxed layer and the mis-orientated GaAs substrates. In this study, using extra slow growth rate of 0.075ML/sec to grow the quantum dot matrix under the temperature of 500°C by the general Riber 32P solid-source MBE system, the high surface density and uniformity in size of two-stacked of quantum dot (QD) matrix have been established. The temperature dependences of the full widths at half-maximum (FWHM) and the positions of photoluminescence (PL) bands are studied experimentally by adding In0.1Ga0.9As surfactant layer and using mis-orientated substrate, respectively. The 3-dimensional QD images using atomic force microscopy (AFM) well agree with the results of above mentioned. Therefore, a systematic estimate is given of the QD structures grown on different epitaxial conditions.",

author = "Tang, {Shiang Feng} and Hsu, {Min Yu} and Chiang, {Cheng Der} and Su, {C. C.} and Liu, {Chuan Pu} and Fang, {Yu Ching}",

year = "2008",

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language = "English",

isbn = "9780819469717",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV",

note = "Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV ; Conference date: 05-12-2007 Through 07-12-2007",

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Tang, SF, Hsu, MY, Chiang, CD, Su, CC, Liu, CP & Fang, YC 2008, The investigations of InAs quantum dots overgrown on in _0.1Ga_0.9As surfactant layer and 10° off-angle (100) GaAs substrate. in Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV., 68001E, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6800, Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV, Canberra, Australia, 07-12-05. https://doi.org/10.1117/12.759448

The investigations of InAs quantum dots overgrown on in _0.1Ga_0.9As surfactant layer and 10° off-angle (100) GaAs substrate. / Tang, Shiang Feng; Hsu, Min Yu; Chiang, Cheng Der et al.
Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV. 2008. 68001E (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6800).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - For propose of achieving the high coherent quantum dots or the expected spectral emission, we have proposed the epitaxial method solved by using self-organized grown on the InxGa1-xAs relaxed layer and the mis-orientated GaAs substrates. In this study, using extra slow growth rate of 0.075ML/sec to grow the quantum dot matrix under the temperature of 500°C by the general Riber 32P solid-source MBE system, the high surface density and uniformity in size of two-stacked of quantum dot (QD) matrix have been established. The temperature dependences of the full widths at half-maximum (FWHM) and the positions of photoluminescence (PL) bands are studied experimentally by adding In0.1Ga0.9As surfactant layer and using mis-orientated substrate, respectively. The 3-dimensional QD images using atomic force microscopy (AFM) well agree with the results of above mentioned. Therefore, a systematic estimate is given of the QD structures grown on different epitaxial conditions.

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Tang SF, Hsu MY, Chiang CD, Su CC, Liu CP, Fang YC. The investigations of InAs quantum dots overgrown on in _0.1Ga_0.9As surfactant layer and 10° off-angle (100) GaAs substrate. In Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV. 2008. 68001E. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.759448