Abstract
It is found that the 1115 and 1157 cm-1 absorption bands in GaAs doped intentionally with 13C (measured at 300 K) are manifestations of the localised vibrational mode two-phonon absorption of 12C As and 13CAs. The ratios of the absorption intensity for single-phonon processes to that for two-phonon processes for 12C and 13C in GaAs are about 87 at 300 K and 75 at 10 K, respectively.
Original language | English |
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Article number | 015 |
Pages (from-to) | 4025-4028 |
Number of pages | 4 |
Journal | Journal of Physics: Condensed Matter |
Volume | 1 |
Issue number | 25 |
DOIs | |
Publication status | Published - 1989 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics