The low leakage current density of MIS with SiO2 thin film made by ICP-CVD

Y. M. Lu, Shu-Yi Tsai, M. H. Hon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Thin Film Transistors (TFT) made from high quality semiconductor films can be used in active matrix liquid crystal displays (AMLCD). The properties of the gate oxide are very important in the operation of MIS. In this work, crystallized SiO2 films were deposited at extremely low temperature (90°C) by inductively coupled plasma chemical vapor deposition. The results show that the deposition rate increased approximately linearly with applied r.f. power in the ICP-CVD system. Only the (111) X-ray diffraction peak appeared in the range of the study. At 1000 Watts, the silicon dioxide film is amorphous which may be attributed to low deposition temperature. The value of the dielectric constant of the MIS varied from 3.75 to 4.05. From the I-V curve it can be seen that the SiO2 thin film has a lower leakage current density when prepared at 1750Watt. The lowest leakage current density obtained in this study was 6.8×10-8A/cm2 @V=IV. Copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationDielectrics for Nanosystems II
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing
Pages261-266
Number of pages6
Edition1
Publication statusPublished - 2006 Jul 3
Event2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society - Denver, CO, United States
Duration: 2006 May 72006 May 12

Publication series

NameECS Transactions
Number1
Volume2
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society
CountryUnited States
CityDenver, CO
Period06-05-0706-05-12

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Lu, Y. M., Tsai, S-Y., & Hon, M. H. (2006). The low leakage current density of MIS with SiO2 thin film made by ICP-CVD. In Dielectrics for Nanosystems II: Materials Science, Processing, Reliability, and Manufacturing (1 ed., pp. 261-266). (ECS Transactions; Vol. 2, No. 1).